VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
1
Document Number: 94394
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Phase Control Thyristors
(Hockey PUK Version), 1650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case K-PUK (A-24)
• High profile hockey PUK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
1650 A
V
DRM
/V
RRM
1200 V, 1400 V, 1600 V, 1800 V, 2000 V
V
TM
1.73 V
I
GT
100 mA
T
J
-40 ��C to +125 °C
Package K-PUK (A-24)
Circuit configuration Single SCR
K-PUK (A-24)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
1650 A
T
hs
55 °C
I
T(RMS)
3080 A
T
hs
25 °C
I
TSM
50 Hz 30 500
A
60 Hz 32 000
I
2
t
50 Hz 4651
kA
2
s
60 Hz 4250
V
DRM
/V
RRM
1200 to 2000 V
t
q
Typical 200 μs
T
J
-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VS-ST1200C..K
12 1200 1300
100
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
VS-ST1200C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
2
Document Number: 94394
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
1650 (700) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 3080
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
30 500
t = 8.3 ms 32 000
t = 10 ms
100 % V
RRM
reapplied
25 700
t = 8.3 ms 26 900
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
4651
kA
2
s
t = 8.3 ms 4250
t = 10 ms
100 % V
RRM
reapplied
3300
t = 8.3 ms 3000
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 46 510 kA
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.91
V
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 1.01
Low level value of on-state slope resistance r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.21
m
High level value of on-state slope resistance r
t2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.19
Maximum on-state voltage V
TM
I
pk
= 4000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.73 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current I
L
1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20 , t
r
1 μs
T
J
= T
J
maximum, anode voltage 80 % V
DRM
1000 A/μs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1.9
μs
Typical turn-off time t
q
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
p
= 500 μs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/μs
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 100 mA