VS-63CPQ100PbF, VS-63CPQ100-N3
www.vishay.com
Vishay Semiconductors
Revision: 31-Aug-11
1
Document Number: 94244
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 30 A
FEATURES
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-63CPQ100... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
2 x 30 A
V
R
100 V
V
F
at I
F
0.64 V
I
RM
max. 25 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
15 mJ
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 60 A
V
RRM
100 V
I
FSM
t
p
= 5 μs sine 2200 A
V
F
30 Apk, T
J
= 125 °C (per leg) 0.64 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-63CPQ100PbF VS-63CPQ100-N3 UNITS
Maximum DC reverse voltage V
R
100 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 153 °C, rectangular waveform
30
A
per device 60
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
2200
10 ms sine or 6 ms rect. pulse 410
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 30 mH 15 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
VS-63CPQ100PbF, VS-63CPQ100-N3
www.vishay.com
Vishay Semiconductors
Revision: 31-Aug-11
2
Document Number: 94244
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
30 A
T
J
= 25 °C
0.77
V
60 A 0.92
30 A
T
J
= 125 °C
0.64
60 A 0.76
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.3
mA
T
J
= 125 °C 25
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.38 V
Forward slope resistance r
t
5.75 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 1300 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
0.8
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 0.4
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.25
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 63CPQ100