IRF1404SPbF
IRF1404LPbF
HEXFET
®
Power MOSFET
Seventh Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
S
D
G
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004Ω
I
D
= 162A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
03/11/04
www.irf.com 1
D
2
Pak
IRF1404SPbF
TO-262
IRF1404LPbF
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 162
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 115 A
I
DM
Pulsed Drain Current 650
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 519 mJ
I
AR
Avalanche Current 95 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range -55 to +175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75 °C/W
R
θJA
Junction-to-Ambient (PCB mounted, steady-state)* ––– 40
PD -95104
IRF1404S/LPbF
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤ 95A, di/dt ≤ 150A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 0.12mH
R
G
= 25Ω, I
AS
= 95A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 95A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 71 110 ns T
J
= 25°C, I
F
= 95A
Q
rr
Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
162
650
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.00350.004 Ω V
GS
= 10V, I
D
= 95A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= 10V, I
D
= 250µA
g
fs
Forward Transconductance 106 ––– ––– S V
DS
= 25V, I
D
= 60A
––– ––– 20
µA
V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– 160 200 I
D
= 95A
Q
gs
Gate-to-Source Charge ––– 35 ––– nC V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 42 60 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 17 ––– V
DD
= 20V
t
r
Rise Time ––– 140 ––– I
D
= 95A
t
d(off)
Turn-Off Delay Time ––– 72 ––– R
G
= 2.5Ω
t
f
Fall Time ––– 26 ––– R
D
= 0.21Ω
Between lead,
and center of die contact
C
iss
Input Capacitance ––– 7360 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1680 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 6630 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1490 ––– V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 1540 ––– V
GS
= 0V, V
DS
= 0V to 32V
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
–––
–––
Use IRF1404 data and test conditions.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.