HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
I
D
= 120A
HEXFET
®
is a registered trademark of International Rectifier.
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D
2
P a k 7 P i n
IRF1405ZS-7PPbF
IRF1405ZL-7PPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
TO-263CA 7 Pin
Form Quantity
IRF1405ZS-7PPbF
Tube 50 IRF1405ZS-7PPbF EOL notice # 289
IRF1405ZS-7PPbF Tape and Reel Left 800 IRF1405ZSTRL7PP
IRF1405ZL-7PPbF
TO-263CA
Tube
50
IRF1405ZL-7PPbF
EOL notice # 288
NoteBase part number Package Type
Standard Pack
D
2
Pak-7Pin
Orderable Part Number
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package L imi ted)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) mJ
E
AS
(tested) Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0. 65
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state) ––– 40
300(1.6mm from case)
°C
A
°C/W
230
1.5
± 20
250
810
See Fig.12a,12b,15,16
-55 to + 175
Max.
150
100
590
120
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 29, 2014
IRF1405ZS/L-7PPbF
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C
R
DS(on)
SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ
V
GS(t h)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 150 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 150 230
Q
gs
Gate-to-Source Charge ––– 37 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 64 –––
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Ris e Time ––– 140 –––
t
d(off)
Turn-Off Delay Time ––– 170 –––
t
f
Fall Time ––– 130 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 5360 –––
C
oss
Output Capacitance ––– 1310 –––
C
rss
Reverse Transfer Capacitance ––– 340 –––
C
oss
Output Capacitance ––– 6080 –––
C
oss
Output Capacitanc e ––– 920 –––
C
oss
eff. Effective Output Capacitance ––– 1700 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 63 95 ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
pF
nA
nC
μA
ns
––– ––– 150
––– ––– 590
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 88A
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 44V
ƒ = 1.0MHz, See Fig. 5
R
G
= 5.0Ω
I
D
= 88A
V
DS
= 25V, I
D
= 88A
V
DD
= 28V
I
D
= 88A
V
GS
= 20V
V
GS
= -20V
V
DS
= 44V
V
GS
= 10V
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L=0.064mH, R
G
= 25Ω, I
AS
= 88A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
Solder mounted on IMS substrate.