600VCoolMOS™C7PowerTransistor

IPW60R120C7

Rev.2.0,2015-11-30Final Data Sheet

TO-247

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

1Description

CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.

600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ

MOSFETsupplierwithhighclassinnovation.

The600VC7isthefirsttechnologyeverwithR

DS(on)

*Abelow1Ohm*mm².

Features

•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)

•IncreasedMOSFETdv/dtruggednessto120V/ns

•IncreasedefficiencyduetobestinclassFOMR

DS(on)

oss

andR

DS(on)

•BestinclassR

DS(on)

/package

•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20

andJESD22)

Benefits

•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe

application

•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency

•Enablinghighersystemefficiencybylowerswitchinglosses

•Increasedpowerdensitysolutionsduetosmallerpackages

•Suitableforapplicationssuchasserver,telecomandsolar

•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto

lowEossandQg

Applications

PFCstagesandPWMstages(TTF,LLC)forhighpower/performance

SMPSe.g.Computing,Server,Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter Value Unit

@ T

j,max

650 V

DS(on),max

120 mΩ

g.typ

34 nC

D,pulse

66 A

D,continuous

@ T

<150°C 31 A

oss

@400V 4 µJ

Body diode di/dt 360 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPW60R120C7 PG-TO 247 60C7120 see Appendix A