HEXFET
®
Power MOSFET
10/10/11
www.irf.com 1
AUIRF1405
PD - 97691A
V
(BR)DSS
55V
R
DS(on)
typ.
4.6m
max
5.3m
I
D (Silicon Limited)
169A
I
D (Package Limited)
75A
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF1405
S
D
G
D
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode recovery dv/dt
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case ––– 0.45
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
°C/W
R
JA
Junction-to-Ambient ––– 62
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
330
2.2
± 20
Max.
169
118
680
75
560
See Fig.12a, 12b, 15, 16
5.0
AUTOMOTIVE GRADE
AUIRF1405
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25, I
AS
= 101A. (See Figure 12).
I
SD
101A, di/dt 210A/μs, V
DD
V
(BR)DSS
,
T
J
175°C
Pulse width 400μs; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging
time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
R
is measured at T
J
of approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.6 5.3
m
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 69 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge ––– 170 260
Q
gs
Gate-to-Source Charge ––– 44 66 nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 62 93
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 190 –––
t
d(off)
Turn-Off Delay Time ––– 130 ––– ns
t
f
Fall Time ––– 110 –––
L
D
Internal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance from package
and center of die contact
C
iss
Input Capacitance ––– 5480 –––
C
oss
Output Capacitance ––– 1210 –––
C
rss
Reverse Transfer Capacitance ––– 280 ––– pF
C
oss
Output Capacitance ––– 5210 –––
C
oss
Output Capacitance ––– 900 –––
C
oss
eff.
Effective Output Capacitance ––– 1500 –––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 88 130 ns
Q
rr
Reverse Recovery Charge ––– 250 380 nC
t
on
Forward Turn-On Time
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
V
DD
= 38V
I
D
= 101A
R
G
= 1.1
V
GS
= -20V
Conditions
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 101A
p-n junction diode.
T
J
= 25°C, I
S
= 101A, V
GS
= 0V
T
J
= 25°C, I
F
= 101A
di/dt = 100A/μs
MOSFET symbol
showing the
integral reverse
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 25V, I
D
= 101A
I
D
= 101A
V
DS
= 44V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
V
GS
= 20V
4.5–––
–––
–––
–––7.5
––– ––– 169
––– ––– 680