HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
I
D
= 120A
Description
This HEXFET
®
Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Automotive Qualified *
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
D
2
P a k 7 P i n
AUTOMOTIVE GRADE
AUIRF1405ZS-7P
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.65
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state) ––– 40
A
°C
250
See Fig.12a,12b,15,16
300 (1.6mm from case )
°C/W
230
1.5
± 20
-55 to + 175
Max.
150
100
590
120
Form Quantity
Tube 50 AUIRF1405ZS-7P
Tape and Reel Left 800 AUIRF1405ZS-7TRL
Orderable Part NumberBase Part Number Package Type
Standard Pack
AUIRF1405ZS-7P D2Pak- 7 Pin
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015
AUIRF1405ZS-7P
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.064mH, R
G
= 25Ω, I
AS
= 88A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C
R
DS(on)
SMD Static Drain-to-Source On-Resistance –––
3.7 4.9
mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs
Forward Transconductance
108 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 150 230 nC
Q
gs
Gate-to-Source Charge ––– 37 ––���
Q
gd
Gate-to-Drain ("Miller") Charge ––– 64 –––
t
d(on)
Turn-On Delay Time ––– 16 ––– ns
t
r
Rise Time ––– 140 –––
t
d(off)
Turn-Off Delay Time ––– 170 –––
t
f
Fall Time ––– 130 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 5360 ––– pF
C
oss
Output Capacitance ––– 1310 –––
C
rss
Reverse Transfer Capacitance ––– 340 –���–
C
oss
Output Capacitance ––– 6080 –––
C
oss
Output Capacitance ––– 920 –––
C
oss
eff. Effective Output Capacitance ––– 1700 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 150
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 590
(Body Diode)
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
63
95
ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 88A
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 44V
ƒ = 1.0MHz, See Fig. 5
R
G
= 5.0Ω
I
D
= 88A
V
DS
= 10V, I
D
= 88A
V
DD
= 28V
I
D
= 88A
V
GS
= 20V
V
GS
= -20V
V
DS
= 44V
V
GS
= 10V