AUIRF1404
V
DSS
40V
R
DS(on)
typ.
3.5m
max.
4.0m
I
D (Silicon Limited)
202A
I
D (Package Limited)
160A
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET
®
Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET
®
power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 202
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 143
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 160
I
DM
Pulsed Drain Current 808
P
D
@T
C
= 25°C Maximum Power Dissipation 333 W
Linear Derating Factor 2.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 620
mJ
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
dv/dt Peak Diode Recovery dv/dt 1.5 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.45
°C/W
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
TO-220AB
AUIRF1404
S
D
G
Base part number Package Type
Standard Pack
Form Quantity
AUIRF1404 TO-220 Tube 50 AUIRF1404
Orderable Part Number
G D S
Gate Drain Source
AUIRF1404
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 85H, R
G
= 25, I
AS
= 121A, V
GS
=10V. (See fig. 12)
I
SD
121A, di/dt 130A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A.
R
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.5 4.0
m
V
GS
= 10V, I
D
= 121A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 76 ––– ––– S V
DS
= 25V, I
D
= 121A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=40 V, V
GS
= 0V
––– ––– 250 V
DS
=32V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 131 196
nC
I
D
= 121A
Q
gs
Gate-to-Source Charge ––– 36 ––– V
DS
= 32V
Q
gd
Gate-to-Drain Charge ––– 37 56
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 17 –––
ns
V
DD
= 20V
t
r
Rise Time ––– 190 –––
I
D
= 121A
t
d(off)
Turn-Off Delay Time ––– 46 –––
R
G
= 2.5
t
f
Fall Time ––– 33 –––
R
D
= 0.2
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––�� 5669 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 1659 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 223 –––
ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 6205 ––– V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1467 ––– V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
C
oss eff.
Effective Output Capacitance
––– 2249 ––– V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 202
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 808
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.5 V T
J
= 25°C,I
S
= 121A,V
GS
= 0V
t
rr
Reverse Recovery Time ––– 78 117 ns
T
J
= 25°C ,I
F
= 121A
Q
rr
Reverse Recovery Charge ––– 163 245 nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)