February 2011 Doc ID 15322 Rev 3 1/14
14
STW77N65M5
N-channel 650 V, 0.033 Ω, 69 A, MDmesh™ V Power MOSFET
TO-247
Features
■ Higher V
DSS
rating
■ Higher dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Application
Switching applications
Description
This device is a N-channel MDmesh™ V Powe r
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstand ing eff i cien cy.
Figure 1. Internal schematic diagram
Order code
V
DSS
@T
jmax.
R
DS(on)
max. I
D
STW77N65M5 710 V < 0.038 Ω 69 A
TO-247
1
2
3
!-V
$
'
3
Table 1. Device summary
Order code Marking Package Packaging
STW77N65M5 77N65M5 TO-247 Tube
www.st.com
Contents STW77N65M5
2/14 Doc ID 15322 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12