May 2017
DocID025979 Rev 2
1/12
This is information on a product in full production.
www.st.com
HSP051-4N10
4-line ESD protection for high speed lines
Datasheet - production data
Features
Flow-through routing to keep signal integrity
Ultralarge bandwidth: 10 GHz
Ultralow capacitance:
0.2 pF (I/O to I/O)
0.35 pF (I/O to GND)
Very low dynamic resistance: 0.48 Ω
100 Ω differential impedance
Low leakage current: 100 nA at 25 °C
Extended operating junction temperature
range: -40 °C to 150 °C
RoHS compliant
Benefits
High ESD protection level
High integration
Suitable for high density boards
Complies with the following standards
MIL STD 883G-Method 3015-7: class 3B
8 kV
IEC 61000-4-2, level 4
25 kV (air discharge)
8 kV (contact discharge)
Applications
The HSP051-4N10 is designed to protect against
electrostatic discharge on sub micron technology
circuits driving:
HDMI 1.4 and 2.0
Digital video Interface
Display port
USB 3.0 and 3.1
Serial ATA
Description
The HSP051-4N10 is a 4-channel ESD array with
a rail to rail architecture designed specifically for
the protection of high speed differential lines.
The ultralow variation of the capacitance ensures
very low influence on signal-skew. The large
bandwidth makes it compatible with HDMI 2.0
4K/2K (= 5.94 Gbps) and USB 3.1 (= 10 Gbps)
The device is packaged in μQFN 1.9 mm x 1 mm
with a 400 μm pitch.
Figure 1: Functional schematic (top view)
µQFN 1.9x1 10L
Characteristics
HSP051-4N10
2/12
DocID025979 Rev 2
1 Characteristics
Table 1: Absolute maximum ratings (T
amb
= 25 °C)
Symbol
Parameter
Value
Unit
V
pp
Peak pulse voltage
IEC61000-4-2 contact discharge
8
kV
IEC61000-4-2 air discharge
25
T
stg
Storage junction temperature range
-65 to +150
°C
T
j
Operating junction temperature range
-40 to +150
T
L
Maximum lead temperature for soldering during 10 s
260
Table 2: Electrical characteristics (T
amb
= 25 °C)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
4.5
5.8
V
I
RM
V
RM
= 3.6 V
10
100
nA
V
CL
I
PP
= 1 A, 8/20 μs
10
V
V
CL
IEC 61000-4-2, +8 kV contact (I
PP
= 16 A),
measured at 30 ns
13
V
R
d
Dynamic resistance, pulse
duration 100 ns
I/O to GND
0.48
Ω
GND to I/O
0.96
C
I/O - I/O
V
I/O
= 0 V
F = 200 MHz to 9 GHz
0.2
0.3
pF
C
I/O - GND
V
I/O
= 0 V
F = 200 MHz to 2.5 GHz
0.4
0.55
pF
F = 2.5 GHz to 9 GHz
0.35
0.45
pF
f
C
-3 dB
10
GHz
Z
diff
Time domain reflectometry:
t
r
= 200 ps (10 - 90%), Z
0
= 100 Ω
85
100
115
Ω