MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-MOSFET,30V
BSZ0501NSI
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
2
OptiMOS
TM
5Power-MOSFET,30V
BSZ0501NSI
Rev.2.0,2015-04-27Final Data Sheet
(enlarged source interconnection)
TSDSON-8FL
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
1Description
Features
•Optimizedforhighperformancebuckconverters
•MonolithicintegratedSchottky-likediode
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
30 V
R
DS(on),max
2.0 mΩ
I
D
40 A
Q
OSS
18 nC
Q
G
(0V..4.5V) 11.4 nC
Type/OrderingCode Package Marking RelatedLinks
BSZ0501NSI PG-TSDSON-8 FL 0501NSI -
1)
J-STD20 and JESD22