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© 2017 ROHM Co., Ltd. All rights reserved.

Datasheet

SCS308AHG

SiC Schottky Barrier Diode

Continuous forward current (T

c

=135°C)

*1 T

c

=100°C, T

j

=150°C, Duty cycle=10% *2 T

c

=25°C

Features Inner Circuit

Outline

V

R

650V

TO-220ACP

I

F

8A

Q

C

21nC

1) Shorter recovery time

2) Reduced temperature dependence

3) High-speed switching possible

4) High surge current capability

Packaging SpecificationsConstruction

Type

Packaging TubeSilicon carbide epitaxial planar type

Reel size (mm) -

Tape width (mm) -

Basic ordering unit (pcs) 50

Packing code C9

Marking SCS308AH

Absolute Maximum Ratings (T

j

= 25°C )

Parameter Symbol Value Unit

Reverse voltage (repetitive peak)

V

RM

650 V

Reverse voltage (DC)

V

R

650 V

A

Surge non-

repetitive forward

current

PW=10ms sinusoidal, T

j

=25°C

I

FSM

67 A

PW=10ms sinusoidal, T

j

=150°C

57 A

PW=10s square, T

j

=25°C

250 A

I

F

8

Repetitive peak forward current

I

FRM

36 A

i

2

t value

1≦PW≦10ms, T

j

=25°C

∫

i

2

dt

22

A

2

s

1≦PW≦10ms, T

j

=150°C

16

A

2

s

Range of storage temperature

T

stg

55 to 175

°C

Total power disspation

P

D

57 W

Junction temperature

T

j

175 °C

(3)

(2)

(1)

(1) Cathode

(2) Cathode

(3) Anode

(1)

(2) (3)

*

1

*

2

*

1

*

2

*

1

*

2

*

1

*

2

1/5

2017.10 - Rev.A

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© 2017 ROHM Co., Ltd. All rights reserved.

Datasheet

SCS308AHG

Electrical characteristics (T

j

= 25°C)

Unit

Min. Typ. Max.

DC blocking voltage

V

DC

I

R

=40A

650 - - V

Parameter Symbol Conditions

Values

1.50 V

I

F

=8A,T

j

=150°C

- 1.44 1.71 VForward voltage

V

F

I

F

=8A,T

j

=25°C

- 1.35

I

F

=8A,T

j

=175°C

- 1.50 - V

Reverse current

I

R

V

R

=650V,T

j

=25°C

- 0.024 40

A

V

R

=650V,T

j

=150°C

- 1.6 160

A

V

R

=650V,T

j

=175°C

- 4.8 -

A

-pF

V

R

=650V,f=1MHz

-36-pF

Total capacitance C

V

R

=1V,f=1MHz

- 400

-nC

Switching time

t

C

V

R

=400V,di/dt=350A/s

-15-ns

Total capacitive charge

Q

C

V

R

=400V,di/dt=350A/s

-21

-mJ

Thermal characteristics

Parameter Symbol Conditions

Values

Unit

Min. Typ. Max.

Non-repetetive

Avaranche Energy

E

ava

L=1mH - 110

2.6 °C/W

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

Thermal resistance

R

th(j-c)

- - 1.8

Ws/K

R

th2

1.81E-01

C

th2

8.01E-04

R

th3

1.55E+00

C

th3

1.82E-03

R

th1

1.89E-02

K/W

C

th1

1.95E-04

PD

T

j

T

c

T

a

R

th,n

R

th1

C

th1

C

th2

C

th,n

2/5

2017.10 - Rev.A