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© 2017 ROHM Co., Ltd. All rights reserved.
Datasheet
RGW60TS65
650V 30A Field Stop Trench IGBT
*1 Pulse width limited by T
jmax
.
Storage Temperature
T
stg
55 to +175
°C
Operating Junction Temperature
T
j
40 to +175
°C
Power Dissipation
T
C
= 25°C P
D
178 W
T
C
= 100°C P
D
89 W
Collector - Emitter Voltage
V
CES
650 V
Gate - Emitter Voltage
V
GES
30
V
Absolute M axi mum Rat i ngs (at T
C
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
C11
Marking
RGW60TS65
IH
Packaging SpecificationsApplications
Type
Packaging TubePFC
Reel Size (mm) -UPS
Tape Width (mm) -Welding
Basic Ordering Unit (pcs) 450Solar Inverter
Packing Code
1)
Low
Collector - Emitter Saturation Voltage
2)
Hig
h Speed Switching
3) Low Switching Loss & Soft Switching
4)
Pb -
free Lead Plating ; RoHS Compliant
Features Inner Ci rcui t
Outline
V
CES
650V
TO-247N
I
C (100℃)
30A
V
CE(sat) (Typ.)
1.5V
P
D
178W
A
T
C
= 25°C
T
C
= 100°C
Collector Current
Pulsed Collector Current
I
CP
*1
120 A
I
C
60 A
I
C
30
(1) Gate
(2) Collector
(3) Emitter
(1)
(2)
(3)
(1)(2)(3)
1/9
2017.10 - Rev.A
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
Datasheet
RGW60TS65
Thermal Resistance
IGBT Electrical Characteristics (at T
j
= 25°C unless otherwise specified)
R
θ(j-c)
- - 0.84 °C/W
Gate - Emitter Leakage Current
I
GES
V
GE
= 30V, V
CE
= 0V
--
-V
μA
V
V
nA
200
10
1.9
-
7.0
Collector - Emitter Breakdown
Voltage
BV
CES
I
C
= 10μA, V
GE
= 0V
650 -
Collector - Emitter Saturation
Voltage
V
CE(sat)
Gate - Emitter Threshold
Voltage
V
GE(th)
T
j
= 25°C
- 1.5
T
j
= 175°C
- 1.85
I
C
= 30A, V
GE
= 15V
V
CE
= 5V, I
C
= 20.0mA
5.0 6.0
Collector Cut - off Current
I
CES
V
CE
= 650V, V
GE
= 0V
--
Unit
Min. Typ. Max.
Parameter Symbol
Values
Unit
Min. Typ. Max.
Parameter Symbol Conditions
Values
Thermal Resistance IGBT Junction - Case
2/9
2017.10 - Rev.A