SSM6L61NU
2
4.
4.
4.
4. Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
4.1.
4.1.
4.1.
4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, T
Q1 Absolute Maximum Ratings (Unless otherwise specified, T
Q1 Absolute Maximum Ratings (Unless otherwise specified, T
Q1 Absolute Maximum Ratings (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1), (Note 2)
Symbol
V
DSS
V
GSS
I
D
I
DP
Rating
20
±8
4
16
Unit
V
A
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) ≤ 10 s, duty ≤ 1 %
4.2.
4.2.
4.2.
4.2. Q2 Absolute Maximum Ratings (Unless otherwise specified, T
Q2 Absolute Maximum Ratings (Unless otherwise specified, T
Q2 Absolute Maximum Ratings (Unless otherwise specified, T
Q2 Absolute Maximum Ratings (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1), (Note 2)
Symbol
V
DSS
V
GSS
I
D
I
DP
Rating
-20
±12
-4
-16
Unit
V
A
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) ≤ 10 s, duty ≤ 1 %
4.3.
4.3.
4.3.
4.3. Absolute Maximum Ratings (Unless otherwise specified, T
Absolute Maximum Ratings (Unless otherwise specified, T
Absolute Maximum Ratings (Unless otherwise specified, T
Absolute Maximum Ratings (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
(Q1, Q2 Common)
(Q1, Q2 Common)
(Q1, Q2 Common)
(Q1, Q2 Common)
Characteristics
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(t ≤ 10 s)
(Note 1)
(Note 1)
Symbol
P
D
P
D
T
ch
T
stg
Rating
1
2
150
-55 to 150
Unit
W
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating. Device mounted on a FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm
2
)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Note: The junction-to-ambient thermal resistance, R
th(j-a)
, and the drain power dissipation, P
D
, vary according to the
board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.