CHA3395-QDG
Ref. : DSCHA3395-QDG5090 - 31 Mar 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
21-29.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3395-QDG is a 3 stage monolithic
medium power amplifier, which produces
24dB gain for 20dBm output power.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
Main Features
Broadband performances: 21-29.5GHz
20dBm Pout at 1dB compression
24dB gain
32dBm OTOI
DC bias: Vd= 4.0V, Id= 180mA
24L-QFN4x4 (QDG)
MSL1
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
21.0
29.5
GHz
Gain
Linear Gain
24
dB
P-1dB
Output Power @1dB comp.
20
dBm
OTOI
3
rd
order Intercept point
32
dBm
10
12
14
16
18
20
22
24
26
28
30
19 20 21 22 23 24 25 26 27 28 29 30
Output Power (dBm), PAE (%)
Frequency (GHz)
Psat
P-1dB
PAE sat
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3667A
YYWWG
UMS
A3667A
YYWWG
UMS
A3688A
YYWWG
UMS
A3395
YYWW
CHA3395-QDG
21-29.5GHz Medium Power Amplifier
Ref. : DSCHA3395-QDG5090 - 31 Mar 15
2/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Electrical Characteristics
Tamb.= +25°C, Vd = +4.0V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
21
29.5
GHz
Gain
Linear Gain
24.0
dB
ΔG
Gain variation in temperature
0.023
dB/°C
G
CTRL
Gain control range
15
dB
OTOI
3
rd
order Intercept point
32
dBm
P
-1dB
Output power @ 1dB compression
20
dBm
Psat
Saturated Output Power
22
dBm
RLin
Input Return Loss
12
dB
RLout
Output Return Loss
20
dB
NF
Noise figure
4.5
dB
Id
Quiescent Drain current
180
mA
Vg
Gate voltage
-0.4
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".