CHA3660-QQG
Ref. : DSCHA3660-QQG5357 - 23 Dec 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
21-27.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3660-QQG is a 3 stage monolithic
medium power amplifier, which produces
25dB gain for 19dBm output power.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
Main Features
Output Power & PAE versus Frequency
■ Broadband performances: 21-27.5GHz
■ 19dBm Pout at 1dB compression
■ 25dB gain
■ 30dBm OTOI
■ DC bias: Vd= 4.0V, Id= 180mA
■ 16L-QFN4x4 (QQG)
■ MSL1
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
21.0
27.5
GHz
Gain
Linear Gain
25
dB
P-1dB
Output Power @1dB comp.
19
dBm
OTOI
3
rd
order Intercept point
30
dBm
10
12
14
16
18
20
22
24
26
28
30
17 18 19 20 21 22 23 24 25 26 27 28
Output power (dBm), PAE (%)
Frequency(GHz)
Psat
P-1dB
PAE sat
UMS
A3660
YYWW
CHA3660-QQG
21-27.5GHz Medium Power Amplifier
Ref. :DSCHA3660-QQG5357 - 23 Dec 15
2/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Qu��bec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Electrical Characteristics
Tamb.= +25°C, Vd = +4.0V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
21.0
27.5
GHz
Gain
Linear Gain in 21- 24GHz
Linear Gain in 24.25- 27.5GHz
25
22
dB
ΔG
Gain variation in temperature
0.025
dB/°C
G
CTRL
Gain control range
15
dB
OTOI
3
rd
order Intercept point in 21-24GHz
3
rd
order Intercept point in 24.25-27.5GHz
30
32
dBm
P
-1dB
Output power @ 1dB in 21-24GHz
Output power @ 1dB in 24.25-27.5GHz
19
18
dBm
Psat
Saturated Output Power in 21-24GHz
Saturated Output Power in 24.25-27.5GHz
21.5
20
dBm
RLin
Input Return Loss in 21- 24GHz
Input Return Loss in 24.25- 27.5GHz
15
13
dB
RLout
Output Return Loss in 21- 24GHz
Output Return Loss in 24.25- 27.5GHz
20
12
dB
NF
Noise figure
4
dB
Id
Quiescent Drain current
180
mA
Vg
Gate voltage (Vg12 & Vg3)
-0.4
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".