eGaN® FET DATASHEET
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | | PAGE 1
EPC2012C
EPC2012C – Enhancement Mode Power Transistor
V
DSS
, 200 V
R
DS (on)
, 100 mW
I
D
, 5 A
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coecient allows very low R
DS (on)
, while its lateral device structure
and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are benecial as well as
those where on-state losses dominate.
EPC2012C eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• HighSpeedDC-DCconversion
• ClassDAudio
• HighFrequencyHard-Switchingand
Soft-SwitchingCircuits
Benets
• UltraHighEciency
•
UltraLowR
DS(on)
• UltralowQ
G
•�� Ultrasmallfootprint
EFFICIENT POWER CONVERSION
Maximum Ratings
V
DS
Drain-to-Source Voltage 200 V
I
D
Continuous (T
A
=25˚C, = 26)5
A
Pulsed (25˚C, T
Pulse
= 300 µs) 22
V
GS
Gate-to-Source Voltag
e6
V
Gate-to-Source Voltage-4
T
J
Operating Temperature -40 to 150
˚C
T
STG
Storage Temperature -40 to 150
R
θJA
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 60 µA 200 V
I
DSS
Drain Source Leakage V
DS
= 160 V, V
GS
= 0 V 10 50 µA
µA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.2 1
mA
Gate-to-Source Reverse Leakage V
GS
= -4 V 10 50
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
0.8 1.4 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 3 A 70 100 mΩ
Source-Drain Characteristics (T
J
= 25˚C unless otherwise stated)
V
SD
Source-Drain Forward Voltage
I
S
= 0.5 A, V
GS
= 0 V 1.9
V
All measurements were done with substrate shorted to source.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Gate Resistance
C
ISS
Input Capacitance
V
GS
V
GS
= 0 V, V
DS
= 100 V
V
GS
= 0 V, V
DS
= 100 V
V
DS
= 100 V, I
D
= 3 A,
100
pFC
OSS
Output Capacitance 64
C
RSS
Reverse Transfer Capacitance 0.4
140
85
0.6
Q
G
Total Gate Charge
Q
G(TH)
Gate Charge at Threshold
R
G
V
DS
= 100 V, I
D
= 3 A
0.6
nC
Ω
Q
GD
Gate to Drain Charge
1
Q
GS
Gate to Source Charge
0.3
Q
OSS
Output Charge
0.2
0.2
10
1.3
0.35
13
Q
RR
Source-Drain Recovery Charge
0
All measurements were done with substrate shorted to source.
= 5 V
Static Characteristics (T
J
= 25˚C unless otherwise stated)
Dynamic Characteristics (T
J
= 25˚C unless otherwise stated)
NEW PRODUCT
HAL
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction to Case 4.2 ˚C/W
R
θ
JB
Thermal Resistance, Junction to Board 12.5 ˚C/W
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 1) 85 ˚C/W
TYP UNIT
Note 1: R
θ
JA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
www.epc-co.com/epc/Products/eGaNFETs/EPC2012C.aspx
eGaN® FET DATASHEET
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2014 | | PAGE 2
EPC2012C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BV
DSS
Drain-to-Source Voltage V
GS
= 0 V, I
D
= 60 µA 200 V
I
DSS
Drain Source Leakage V
DS
= 160 V, V
GS
= 0 V 10 50 µA
µA
I
GSS
Gate-to-Source Forward Leakage V
GS
= 5 V 0.2 1
mA
Gate-to-Source Reverse Leakage V
GS
= -4 V 10 50
V
GS(TH)
Gate Threshold Voltage V
GS
= V
GS
, I
D
= 1 mA 0.8 1.4 2.5 V
R
DS(on)
Drain-Source On Resistance V
GS
= 5 V, I
D
= 3 A 70 100 mΩ
Source-Drain Characteristics (T
J
= 25˚C unless otherwise stated)
V
SD
Source-Drain Forward Voltage
I
S
= 0.5 A, V
GS
= 0 V 1.9
V
All measurements were done with substrate shorted to source.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Gate Resistance
C
ISS
Input Capacitance
V
GS
V
GS
= 0 V, V
DS
= 100 V
V
GS
= 0 V, V
DS
= 100 V
V
DS
= 100 V, I
D
= 3 A,
100
pFC
OSS
Output Capacitance 64
C
RSS
Reverse Transfer Capacitance 0.4
140
85
0.6
Q
G
Total Gate Charge
Q
G(TH)
Gate Charge at Threshold
R
G
V
DS
= 100 V, I
D
= 3 A
0.6
nC
Ω
Q
GD
Gate to Drain Charge
1
Q
GS
Gate to Source Charge
0.3
Q
OSS
Output Charge
0.2
0.2
10
1.3
0.35
13
Q
RR
Source-Drain Recovery Charge
0
All measurements were done with substrate shorted to source.
= 5 V
Static Characteristics (T
J
= 25˚C unless otherwise stated)
Dynamic Characteristics (T
J
= 25˚C unless otherwise stated)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
15
20
10
5
0
0 1 2 3 4 5 6
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
Figure 1: Typical Output Characteristics at 25°C
R
DS(om)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
250
200
100
50
150
0
2 2.5 3 3.5 4 4.5 5
I
D
= 3 A
I
D
= 6 A
I
D
= 10 A
I
D
= 15 A
Figure 3: R
DS(on)
vs. V
GS
for Various Drain Currents
I
D
– Drain Current (A)
V
GS
– Gate-to-Source Voltage (V)
20
15
10
5
0
0.5 1 1.5 2 2.5 3 4 4.5 53.5
25˚C
125˚C
V
DS
= 6 V
Figure 2: Transfer Characteristics
R
DS(on)
– Drain-to-Source Resistance (mΩ)
V
GS
– Gate-to-Source Voltage (V)
50
150
100
200
250
0
2 2.5 3 3.5 4 4.5 5
I
D
= 3 A
25˚C
125˚C
Figure 4: R
DS(on)
vs. V
GS
for Various Temperatures