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DUAL TRANSISTOR (NPN+NPN)
(
z Epitaxial Planar Die Construction
z Complementary PNP Type Available(MMDT5401)
z
Ideal for Medium Power Amplification and Switching
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V
(BR)CBO
I
C
=100A,I
E
=0 180 V
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V
(BR)CEO
I
C
=1mA , I
B
=0 160 V
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V
(BR)EBO
I
E
=10A, I
C
=0 6 V
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I
CBO
V
CB
=120V, I
E
=0 0.05 A
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I
EBO
V
EB
=4V, I
C
=0 0.05 A
h
FE(1)
V
CE
=5 V, I
C
=1mA 80
h
FE(2)
V
CE
=5 V, I
C
=10mA 100 300
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h
FE(3)
V
CE
=5 V, I
C
=50mA 30
V
CE(sat)1
I
C
=10mA, I
B
=1mA 0.15 V
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V
CE(sat)2
I
C
=50mA, I
B
=5mA 0.2 V
V
BE(sat)1
I
C
=10mA, I
B
=1mA 1 V
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V
BE(sat)2
I
C
=50mA, I
B
=5mA 1 V
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f
T
V
CE
=10V, I
C
=10mA,f=100MHz 100 300 MHz
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C
ob
V
CB
=10V, I
E
=0, f=1MHz 6 pF
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NF V
CE
=5V, I
C
=0.2mA,
R
S
=1K,f =1kHz
8 dB
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>
<
Collector- Base Voltage 180 V
>

Collector-Emitter Voltage 160 V
>
<
Emitter-Base Voltage 6 V
Collector Current -Continuous 0.2 A
Collector Power Dissipation 0.2 W
T
J
,
;
Operation Junction and
S
torage Temperature Range
-55~+150

1
2
3
6
5
4
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
1
Rev. - 2.0
www.jscj-elec.com
0.1 1 10
1
10
100
0.2 0.4 0.6 0.8 1.0
1
10
100
110
100
1 10 100
10
100
0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
0.20
0.25
024681012
0
3
6
9
12
15
18
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
1 10 100
0.01
0.1
f=1MHz
I
E
=0 / I
C
=0
T
a
=25ć
CAPACITANCE C (pF)
REVERSE VOLTAGE V (V)
C
ob
C
ib
C
ob
/ C
ib
——
V
CB
/ V
EB
I
C
—— V
BE
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
T
a
=25ć
T
a
=100ć
V
CE
=10V
T
a
=25
ć
COLLECTOR CURRENT I
C
(mA)
TRANSITION FREQUENCY f
T
(MHz)
I
C
f
T
——
COMMON EMITTER
V
CE
=5V
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GAIN h
FE
T
a
=25
ć
T
a
=100
ć
COMMON EMITTER
V
CE
=5V
I
C
h
FE
——
COLLECTO
R POWER DISSIPATION
P
C
(W)
AMBIENT TEMPERATURE T
a
( )ć
P
C
—— T
a
COMMON
EMITTER
T
a
=25
��
40uA
50uA
70uA
90uA
80uA
60uA
30uA
I
B
=20uA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Static Characteristic
=10
T
a
=100ć
T
a
=25ć
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
I
C
V
BEsat
——
0.3
200
200
200
3
150
50
3020
20
200
500
COLLECTOR CURRENT I
C
(mA)
=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
T
a
=25ć
T
a
=100
ć
V
CEsat
—— I
C
6 0#"#
2
Rev. - 2.0
www.jscj-elec.com