E15A THRU E15J
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2458
Rev.1.1,10-Dec-19
www.21yangjie.com
Surface Mount Super Fast Recovery Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● Super fast switching for high efficiency
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in super fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Date
●
P
ackage: SOD-123FL
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
Cathode line denotes the cathode end
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
E15A E15B E15C E15D E15F E15G E15H E15J
Device marking code
E15A E15B E15C E15D E15F E15G E15H E15J
Repetitive peak reverse voltage
V
RRM
V 50 100 150 200 300 400 500 600
A
verage rectified output current
@60Hz sine wave, Resistance load, TL (FIG.1)
I
O
A 1.5
Surge(non-repetitive)forward current
@ 60Hz half-sine wave,1 cycle, Ta=25℃
I
FSM
A 45
Storage temperature
T
stg
℃
-55 ~+150
Junction temperature
T
j ℃
-55 ~+150
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
TEST
CONDITIONS
E15A E15B E15C E15D E15F E15G E15H E15J
Maximum instantaneous
forward voltage drop per diode
V
F
V
I
FM
=1.5A
1.0 1.3 1.7
Maximum reverse recovery time
t
rr
ns
I
F
=0.5A,I
R
=1.0A,
I
RR
=0.25A
35
Maximum DC reverse current at
rated DC blocking voltage per diode
I
RRM
μA
Ta=25℃
5
Ta=125℃
100
COMPLIANT
RoHS
COMPLIANT
RoHS
E15A THRU E15J
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2458
Rev.1.1,10-Dec-19
www.21yangjie.com
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
E15A E15B E15C E15D E15F E15G E15H E15J
Typical Thermal resistance
RθJ-A
℃/W
68
1)
RθJ-L 20
1)
RθJ-C 18
1)
Note：
（1）Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm
copper pad areas
.
■
Characteristics (Typical)
1
0
2
5
10 20 50 100
10
20
30
40
50
60
70
8.3ms Single Half Sine Wave
JEDEC Method
FIG2: Surge Forward Current Capability
Peak Forward Surge Current（A）
Number of Cycles
0
0
0.3
FIG1:Io-TL Curve
16040 80 120
0.6
0.9
1.2
1.5
1.8
Average Forward Output（A）
Lead Temperature（℃）
0.01
0.60.4 1.0 1.2
1.4
0.8
0.1
1.0
10
100
1.6
E15A-E15D
E15F-E15G
E15H-E15J
FIG.3: Typical Forward Voltage
Instantaneous Forward Voltage(V)
Instantaneous Forward Current(A)
0.001
0.01
0
20
40 60 80 100
0.1
1.0
10
100
FIG.4: Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (uA)
Ta=25℃
Ta=125℃