1
N-Channel 40 V (D-S) MOSFET
FEATURES
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
40
0.027 at V
GS
= 10 V
55
d
9.5
0.07 at V
GS
= 4.5 V
5
d
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on
1" square PCB (FR-4 material).
d. Package limited.
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
55
d
A
T
C
= 70 °C
5
d
Pulsed Drain Current
I
DM
165
A
valanche Current
I
AS
4
Single A
valanche Energy
a
L = 0.1 mH
E
AS
8
mJ
Max
i
m
u
m P
o
w
e
r Dissipation
a
T
C
= 25 °C
P
D
5.5
b
W
T
A
= 25 °C
c
2.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
4
°C/W
Junction-to-Case (Drain)
R
thJC
2.
N-Channel MOSFET
G
D
S
TO-252
SGD
Top View
www.din-tek.jp
DTU09N04
•
DT-Trench
Power MOSFET
2
Notes:
a. Pulse test; pulse width ≤ 300 µs,
duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolut
e Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise no
ted
Parameter Symbol Test Conditions Min. Ty
p. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
DS
= 0 V, I
D
= 250 µA
40
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1 2.5
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 250 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V 1
µAV
DS
= 30 V, V
GS
= 0 V, T
J
= 125 °C 50
V
DS
= 30 V
,
V
GS
= 0 V
,
T
J
= 150 °C
25
0
On-State
Dr
ain Current
a
I
D(on)
V
DS
≥ 10 V, V
GS
= 10 V
55
A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
,
I
D
= 22 A
0.027
Ω
V
GS
= 4.5 V, I
D
= 20 A
0.07
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A 10 S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
92
pFOutput Capacitance C
oss
76
Reverse Transfer Capacitance C
rss
221
Total Gate Charge
c
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A 4 6
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
2. 3.
Gate-Source Charge
c
Q
gs
Gate-Drain Charge
c
Q
gd
.7
Gate Resistance R
g
f = 1 MHz 0.4 2 4 Ω
Tur n - O n D el ay Time
c
t
d(on)
V
DD
= 15 V, R
L
= 1.5 Ω
I
D
≅ 10 A, V
GEN
= 10 V, R
g
= 1 Ω
81
6
ns
Rise Time
c
t
r
918
Turn-Off Delay Time
c
t
d(off)
35 53
Fall Time
c
t
f
918
Drain-Source Body Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current I
S
55
A
Pulse
d Current I
SM
165
Forward Voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V 0.75 1.5 V
Reverse Recovery Time t
rr
I
F
=
10
A, dI/dt = 100 A/µs
3
4
51
ns
P
e
ak R
e
v
e
rse Recovery Current I
RM(
REC)
23
A
Re
verse Reco
v
e
r
y
Charge Q
rr
34 51 nC
www.din-tek.jp
DTU09N04