1
N-Channel 55 V (D-S) MOSFET
FEATURES
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectifi cation
• DC/DC Converter
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(
)
I
D
(A)
d
Q
g
(Typ.)
55
0.0052
at V
GS
= 10 V
1
0
0
79
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
55
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
100
d
A
T
C
= 70 °C
80
d
Pulsed Drain Current
I
DM
300
Avalanche Current
I
AS
50
Single Avalanche Energy
a
L = 0.1 mH
E
AS
170
mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
125
b
W
T
A
= 25 °C
c
3.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
°C/W
Junction-to-Case (Drain)
R
thJC
1
DTK0455
www.din-tek.jp
D
2
PAK
(TO-263)
G
D
S
•
DT-Trench
Power MOSFET
2
Notes:
a. Pulse test; pulse w
i
dth
300 µs, duty cycle
2 %.
b.
Guaranteed by design, not subject to production testing.
c. Independent of ope
rating temperature.
Stresses beyond those listed under “Ab
s
olute Maximum Ratings” ma
y cause permanent damage to t he device. These are stress rati ngs only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 250 µA
55
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 250 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55 V, V
GS
= 0 V
1
µA
V
DS
= 55 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 55 V, V
GS
= 0 V, T
J
= 150 °C
250
On-State
Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 22 A
0.0052
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
1
5
9
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
3
286
pFOutput Capacitance
C
oss
705
Reverse Transfer Capacitance
C
rss
283
Total Gate Charge
c
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
87 131
nC
Gate-Source Charge
c
Q
gs
15.3
Gate-Drain Charge
c
Q
gd
12.2
Gate Resistance
R
g
f = 1 MHz
0.5 2.7 5.4
Turn-On Delay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
11 20
ns
Rise Time
c
t
r
714
Turn-Off Delay Time
c
t
d(off)
45 68
Fall Time
c
t
f
714
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
I
S
90
A
Pulsed Current
I
SM
30
0
Forward Voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V 0.72 1.2 V
Reverse Recovery Time
t
rr
I
F
= 10 A, dI/dt = 100 A/µs
42 63 ns
Peak Reverse Recovery Current
I
RM(REC)
2.5 3.8 A
Reverse Recovery Charge
Q
rr
52 78 nC
DTK0455
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0.0058