1
N-Channel 40 V (D-S) MOSFET
FEATURES
• 100 % R
g
and UIS Tested
APPLICATIONS
• Notebook PC Core
• VRM/POL
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
e.
Calculated based on maximum junction temperature. Package limitation current is 50 A.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a, e
Q
g
(Typ.)
40
0.0047 at V
GS
= 10 V
70
67 nC
0.006 at V
GS
= 4.5 V
65
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
70
a, e
A
T
C
= 70 °C
60
e
T
A
= 25 °C
19
b, c
T
A
= 70 °C
18.6
b, c
Pulsed Drain Current
I
DM
280
Avalanche Current Pulse
L = 0.1 mH
I
AS
59
Single Pulse Avalanche Energy
E
AS
210
mJ
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
a,
e
A
T
A
= 25 °C
3.5
b,
c
Maximum Power Dissipation
T
C
= 25 °C
P
D
105
a
W
T
C
= 70 °C
55
T
A
= 25 °C
6.15
b, c
T
A
= 70 °C
3.05
b, c
Ope
rating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 17
5 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t 10 s
R
thJA
°C/W
Maximum Junction-to-Case Steady State
R
thJC
Top View
1
2
3
4
8
7
6
5
DTQ6404
www.din-tek.jp
70
2515
1.51.0
PIN1
DFN5X6
Top View Bottom View
•
DT-Trench
Power MOSFET
2
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functional operatio n
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwis e no te d)
Parameter Symbol Test Conditions Min . Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
40
V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
35
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 5.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.2
2.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
µA
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V
, V
GS
= 1
0
V
70
A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A
0.0047
V
GS
= 4.5 V, I
D
= 20 A
0.006
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
110
S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 12.5 V
,
V
GS
= 0 V, f = 1 MHz
pFOutput Capacitance
C
oss
992
Reverse Transfer Capacitance
C
rss
683
Total Gate Charge
Q
g
V
DS
= 32 V, V
GS
= 10 V, I
D
= 30 A
69
nC
V
DS
= 32 V, V
GS
= 4.5 V, I
D
= 20 A
58.1
Gate-Source Charge
Q
gs
32
Gate-Drain Charge
Q
gd
27
Gate Resistance
R
g
f = 1 MHz 1.4 2.1
Turn-On Delay Time
t
d(on)
V
DD
= 15 V, R
L
= 0.555
I
D
30 A, V
GEN
= 10 V, R
g
= 1
18 27
ns
Rise Time
t
r
11 17
Turn-Off Delay Time
t
d(off)
70 105
Fall Time
t
f
10 15
Turn-On Delay Time
t
d(on)
V
DD
= 15 V, R
L
= 0.625
I
D
20 A, V
GEN
= 4.5 V, R
g
= 1
55 83
Rise Time
t
r
180 270
Turn-Off Delay Time
t
d(off)
55 83
Fall Time
t
f
12 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
70
A
Pulse Diode Forward Current
a
I
SM
280
Body Diode Voltage
V
SD
I
S
= 22 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
52 78 ns
Body Diode Reverse Recovery Charge
Q
rr
70.2 105 nC
Reverse Recovery Fall Time
t
a
27
ns
Reverse Recovery Rise Time
t
b
25
DTQ6404
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0.007
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