1
N-Channel 30-V (D-S) MOSFET
FEATURES
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
•DC/DC
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a, e
Q
g
(Typ)
30
0.0021 at V
GS
= 10 V
120
92 nC
0.0029 at V
GS
= 4.5 V
100
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 2
0
Contin
uous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
120
a, e
A
T
C
= 70 °C
98
e
T
A
= 25 °C
35.8
b,
c
T
A
= 70 °C
27
b, c
Pulsed Drain Current
I
DM
360
Avalanche Current Pulse
L = 0.1 mH
I
AS
39
Single Pulse Avalanche Energy
E
AS
94.8 mJ
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
90
a, e
A
T
A
= 25 °C
3.13
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
250
a
W
T
C
= 70 °C
175
T
A
= 25 °C
3.75
b, c
T
A
= 70 °C
2.63
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ. Max. Unit
Maximum Junction-to-Ambient
b, d
t 10 sec
R
thJA
32 40
°C/W
Maximum Junction-to-Case Steady State
R
thJC
0.
5 0.6
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DTK0203
D
2
PAK
(TO-263)
G
D
S
•
DT-Trench
Power MOSFET
2
No
t
e
s
:
a.
P
u
lse test; pulse w
i
dth
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Ab
solute Maximum Ratings” may cause perma nent damage to the device . These are stress ratings only, and f unctional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symb
ol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
30
V
V
DS
T
emper
ature Coefficient V
DS
/T
J
I
D
= 250 µA
35
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 7.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.5
2.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(
on)
V
DS
5 V, V
GS
= 10 V
90 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 38.8 A
0.0021
V
GS
= 4.5 V, I
D
= 37 A
0.0029
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 38.8 A
160 S
Dy
nam
i
c
b
Inpu
t Capacita
n
ce
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
6201
pFOutput Capacitance
C
oss
1725
Reverse Transfer Capacitance
C
rss
970
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 38.8 A
171 257
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 28.8 A
81.5 123
Gate-Source Charge
Q
gs
34
Gate-Drain Charge
Q
gd
29
Gate Resistance
R
g
f = 1 MHz 1.4 2.1
Turn-On Delay Time
t
d(on)
V
DD
= 15 V, R
L
= 0.625
I
D
24 A, V
GEN
= 10 V, R
g
= 1
18 27
ns
Rise Time
t
r
11 17
Turn-Off Delay Time
t
d(off)
70 105
Fall Time
t
f
10 15
Turn-On Delay Time
t
d(on)
V
DD
= 15 V, R
L
= 0.67
I
D
22.5 A, V
GEN
= 4.5 V, R
g
= 1
55 83
Rise Time
t
r
180 270
Turn-Off Delay Time
t
d(off)
55 83
Fall Time
t
f
12 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
120
A
Pulse Diode Forward Current
a
I
SM
360
Body Diode Voltage
V
SD
I
S
= 2
2
A
0.8
1.2
V
Body Diode Re
verse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
52 78 ns
Body Diode Reverse Recovery Charge
Q
rr
70.2 105 nC
Reverse Recovery Fall Time
t
a
27
ns
Reverse Recovery Rise Time
t
b
25
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DTK0203
0.0025
0.0039