www.excelitas.com Page 1 of 9 PGA Multi-epi Series Rev.2014-04
DATASHEET
Photon Detection
Excelitas Technologies’ PGA Series of single- and multi-epi 905 nm pulsed
semiconductor lasers consists of hermetically packaged devices having up
to four active lasing cavities, which are epitaxially grown on a single GaAs
substrate chip. This multi-cavity design multiplies the output power by the
number of epi-layers. For example, the QPGA quad laser at 225 µm active
layer, width which has four epitaxially grown lasing layers, delivers an
output peak power >100 W and, by additionally stacking three quad chips
into a single package, the usable device power even exceeds 300 W.
The laser chips of the PGA family feature stripe widths of 75 and 225 µm
and come as single (PGA), double (DPGA), triple (TPGA), or quadruple
(QPGA) epi-cavity version, which additionally can be stacked to further
increase the output power.
The PGA series possesses a 25° beam divergence in the direction
perpendicular to chip surface and a 10° beam spread within the junction
plane. The power output shows an excellent stability over the full MIL
specification temperature range. Structures are fabricated using metal
organic chemical vapour deposition (MOCVD).
Recognizing that different applications require different packages, six
standard package options are available, including the traditional stud
designs as well as 5.6 and 9 mm CD packages and ceramic substrates. Since
pulse widths in applications have decreased and optical coupling has
become even more important, the newer packages – boasting reduced
inductance and thinner, flatter windows – have gained popularity.
Additionally where fiber coupling applications are concerned, the
transverse spacing of the EPI cavity active areas concentrates more optical
power into a smaller geometry allowing for increased optical power
coupling into optical fibers.
Key Features
Doubling, tripling or quadrupling of
the output power from a single epi-
cavity
Peak power >300 W for 3 physically
stacked quad epi-cavity chips
Extremely high reliability
Proven in safety applications since
early 1990s
Range of single element and stacked
devices
Choice of 6 standard packages.
80% power retention at 85°C
ambient
Flexibility in customization for
different applications
Small emitting areas increases fiber
coupled output
RoHS compliant
Applications
Laser range finding
Laser safety curtains (laser scanning)
Infrared night illumination
Laser speed measurement (LIDAR)
�� Automotive adaptive cruise control
(ACC)
Material excitation in medical and
other analytical applications
Weapon simulation
Proximity Sensing
The PGA Series of pulsed semiconductor lasers are available in single,
double, triple, or quadruple epi-cavity versions.
PGA Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers
High-Power Laser-Diode Family Series
www.excelitas.com Page 2 of 9 PGA Multi-epi Series Rev.2014-04
PGA Pulsed Laser Family Selection Table
The following table lists the preferred chip and stacking options. For other configurations please inquire.
# of
emitting
stripes
Typical peak power
at 10 A, 100 ns
at 30 A, 100 ns
Device
Description
75 µm (3 mils)
stripe width
225 µm (9 mils)
stripe width
PGAx1
Single chip laser ��� Single epi-cavity
1
8 W
23W
DPGAx1
Single chip laser –Double epi-cavity
2
15 W
50W
TPGAx1
Single chip laser –Triple epi-cavity
3
23 W
75W
QPGAx1
Single chip laser –Quad epi-cavity
4
33 W
100W
TPGAx2
Double chip laser –Two stacked chips, triple epi-cavity
6
45 W
150W
QPGAx2
Double chip laser – Two stacked chips, quad epi-cavity
8
65 W
200W
QPGAx3
Triple chip laser – Three stacked chips, quad epi-cavity
12
95 W
300W
‘x’ = package type. Preferred package: S-type
Table 1: Maximum Ratings
Parameter
Symbol
Min
Max
Units
Peak reverse voltage
V
RM
2
V
Pulse duration
t
W
1
µs
Duty factor
du
0.1
%
Storage temperature
T
S
-55
105
°C
Operating temperature
T
OP
-55
85
°C
Soldering for 5 seconds (leads only)
+260
°C
Table 2: Generic Electro Optical Specifications at 23ºC
Parameter
Symbol
Min
Typ
Max
Units
Center wavelength of spectral envelope
λ
C
895
905
915
nm
Spectral bandwidth at 50% intensity points
Δλ
5
nm
Wavelength temperature coefficient
Δλ/ΔT
0.25
nm/°C
Beam spread (50% peak intensity) parallel to junction plane
Θ
||
10
degrees
Beam spread (50% peak intensity) perpendicular to junction plane
Θ
|
25
degrees