AiT Semiconductor Inc.
www.ait-ic.com
DS22W~DS220W
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 2A
REV1.0 - SEP 2015 RELEASED - - 1 -
DESCRIPTION
FEATURES
The DS22W~DS220W are available in SOD-123FL
package
Metal silicon junction, majority carrier
conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency
inverters, free wheeling, and polarity protection
applications
Available in SOD-123FL package
ORDERING INFORMATION
Package Type
Part Number
SOD-123FL
DS22W
DS24W
DS26W
DS28W
DS210W
DS212W
DS215W
DS220W
Note
SPQ: 3,000pcs/Reel
AiT provides all RoHS Compliant Products
PIN DESCRIPTION
AiT Semiconductor Inc.
www.ait-ic.com
DS22W~DS220W
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 2A
REV1.0 - SEP 2015 RELEASED - - 2 -
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or
inductive load, for capacitive load, derate by 20 %
Parameter
Symbol
DS22W
DS24W
DS26W
DS28W
DS210W
DS212W
DS215W
DS220W
Unit
Maximum Repetitive Peak
Reverse Voltage
V
RRM
20
40
60
80
100
120
150
200
V
Maximum RMS Voltage
V
RMS
14
28
42
56
80
100
105
140
V
Maximum DC Blocking
Voltage
V
DC
20
40
60
80
100
120
150
200
V
Maximum Average Forward
Rectified Current
I
F(AV)
2.0
A
Peak Forward Surge Current
8.3ms Single Half Sine-wave
Superimposed on Rated
Load (JEDEC Method)
I
FSM
50
40
A
Max Instantaneous Forward
Voltage at 2A
V
F
0.55
0.70
0.85
0.95
V
Maximum DC
Reverse Current
at Rated DC
Blocking Voltage
T
A
=25°C
T
A
=100°C
I
R
0.5
10
0.3
5
mA
Typical Junction
Capacitance
NOTE1
C
J
220
80
pF
Operating Junction
Temperature Range
T
J
-55 ~ +125
°C
Storage Temperature Range
T
STG
-55 ~ +150
°C
NOTE1: Measured at 1MHz and applied reverse voltage of 4V D.C.