AiT Semiconductor Inc.
www.ait-ic.com
1SS226
SWITCHING DIODES
ULTRA HIGH SPEED SWITCHING
REV1.0 - JAN 2015 RELEASED - - 1 -
DESCRIPTION
FEATURES
The 1SS226 is available in SOT-23 package
Low forward voltage : V
F(3)
= 0.9V(typ.)
Fast reverse recovery time : t
RR
=1.6ns(typ.)
Small total capacitance : C
T
=0.9pF(typ.)
Available in SOT-23 package
ORDERING INFORMATION
Package Type
Part Number
SOT-23
1SS226
Note
SPQ: 3,000pcs/Reel
AiT provides all RoHS Compliant Products
PIN DESCRIPTION
AiT Semiconductor Inc.
www.ait-ic.com
1SS226
SWITCHING DIODES
ULTRA HIGH SPEED SWITCHING
REV1.0 - JAN 2015 RELEASED - - 2 -
ABSOLUTE MAXIMUM RATINGS
V
RM
, Maximum (Peak) Reverse Voltage
85V
V
R
, Reverse Voltage
80V
I
FM
, Maximum (Peak) Forward Current
300mA
NOTE1
I
O
, Average Forward Current
100mA
NOTE1
I
FSM
, Surge Current (10ms)
2A
NOTE1
P, Power Dissipation
150mW
T
J
, Junction Temperature
125°C
T
STG
, Storage Temperature Range
-55°C~125°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: Unit rating. Total rating = Unit rating × 0.7.
ELECTRICAL CHARACTERISTICS
T
A
= 25°C
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Voltage
V
F(1)
I
F
=1mA
0.60
V
V
F(2)
I
F
=10mA
0.72
V
F(3)
I
F
=100mA
0.90
1.20
Reverse Current
I
R(1)
V
R
=30V
0.1
μA
I
R(2)
V
R
=80V
0.5
Total Capacitance
C
T
V
R
=0, f=1MHz
0.9
3.0
pF
Reverse Recovery Time
t
rr
I
F
=10mA (Fig.1)
1.6
4.0
ns