Features
• Ease of Paralleling
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behavior
• High temperature operation
• High frequency operation
Benefits
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Motor drives
• Solar application,UPS
• Power Switching Circuits
Key Characteristics
V
RRM
650
V
I
F,
T
c
=123℃
10
A
Q
C
33
nC
1
Part No. Package Type Marking
ASD1065F
TO-220-2F
ASD1065F
Document ID Issued Date Revised Date
Revision
Page
AS-xxxxxxxx
2019/08/10
2019/10/18
A
5
Document ID Issued Date Revised Date
Revision
Page
AS-3240009
2018/09/10
/
A
5
A
K
ASD1065F
650V,10A Silicon Carbide Schottky Diode
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
ASD1065F
650V,10A Silicon Carbide Schottky Diode
2
Maximum Ratings
Document ID Issued Date Revised Date
Revision
Page
AS-3240009
2018/09/10
/
A
5
Thermal Characteristics
Parameter Symbol Test Condition Value Unit
Repetitive Peak Reverse
Voltage
V
RRM
6
50
V
Surge Peak Reverse
Voltage
V
RSM
6
50
DC Blocking Voltage
V
DC
650
Continuous Forward
Current
I
F
T
C
=25℃
T
C
=100℃
T
C
=123℃
18
14
10
A
Repetitive Peak Forward
Surge Current
I
FRM
T
C
=25℃, tp=10ms ， Half Sine
Wave，D=0.3
50
A
Non-repetitive Peak
Forward Surge Current
I
FSM
T
C
=25℃, tp=10ms ， Half Sine
Wave
80
A
Power Dissipation
P
TOT
T
C
=25
℃
55
W
T
C
=110
℃
24
W
Operating Junction
T
j
-55
℃
to 175
℃
℃
Storage Temperature
T
stg
-55
℃
to 175
℃
℃
Mounting Torque
M3 Screw
6-32 Screw
1
8.8
Nm
lbf-in
Parameter Symbol Test Condition
Value
Unit
Typ.
Thermal resistance from
junction to case
R
th JC
2.7
℃/W
V
V
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182