Features
• Ease of Paralleling
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behaviour
• High temperature operation
• High frequency operation
Benefits
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications
Key Characteristics
V
RRM
1200
V
I
F,
T
c
≤140℃
10
A
Q
C
50
nC
Part No. Package Type Marking
ASD10120C
TO-247-2
ASD10120C
1
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Motor drives
• Solar application,UPS
• Power Switching Circuits
Document ID Issued Date Revised Date
Revision
Page
AS-3240022
2018/09/10
/
A
5
CASE
ASD10120C
1200V,10A Silicon Carbide Schottky Diode
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
ASD10120C
1200V,10A Silicon Carbide Schottky Diode
2
Document ID Issued Date Revised Date
Revision
Page
AS-3240022
2018/09/10
/
A
5
Maximum Ratings
Thermal Characteristics
Parameter Symbol Test Condition Value Unit
Repetitive Peak Reverse
Voltage
V
RRM
1200
V
Surge Peak Reverse
Voltage
V
RSM
1200
DC Blocking Voltage
V
DC
1200
Continuous Forward
Current
I
F
T
C
=25℃
T
C
=125℃
T
C
=140℃
29
14
10
A
Repetitive Peak Forward
Surge Current
I
FRM
T
C
=25℃, tp=10ms ， Half Sine
Wave，D=0.3
50
A
Non-repetitive Peak
Forward Surge Current
I
FSM
T
C
=25℃, tp=10ms ， Half Sine
Wave
70
A
P
ower Dissipation
P
TOT
T
C
=25℃
139
W
T
C
=110℃
60
W
Operating Junction
T
j
-55℃ to 175℃
℃
S
torage Temperature
T
stg
-55℃ to 175℃
℃
M
ounting Torque
M3 Screw
6-32 Screw
1
8.8
Nm
lbf-in
Parameter Symbol Test Condition
Value
Unit
Typ.
Thermal resistance from
junction to case
R
th JC
0.96
℃/W
V
V
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TEL:+86-755-23776891
FAX:+86-755-81482182