MUR860DL
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1735
Rev.1.0,03-Apr-20
Fast Recovery Epi Diodes
Features
● High frequency operation
● High surge forward current capability
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-252
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MUR860DL
Device marking code
MUR860DL
Repetitive Peak Reverse Voltage
V
RRM
V 600
Average Rectified Output Current @60Hz sine
wave, R-load, T
c
=62℃
I
O
A
8
Surge(Non-repetitive)Forward Current
@60H
z
half sine-wave, 1 cycle, T
a
=25℃
I
FSM
A
50
Current Squared Time @1ms≤t≤8.3ms
Tj=25℃，
I
2
t
A
2
s
12.5
Storage Temperature
T
stg
℃
-55 ~ +150
Junction Temperature
T
j
���
-55 ~ +150
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT TEST CONDITIONS
MUR860DL
Maximum Peak Forward Voltage V
FM
V
I
FM
=8.0A
3.4
Maximum DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
V
RM
=V
RRM
Ta=25℃
20
I
RRM2
V
RM
=V
RRM
Ta=125℃
200
Reverse Recovery Time T
rr
ns
I
F
=0.5A
I
RM
=1A I
RR
=0.25A
25
COMPLIANT
RoHS
Pin
2
Pin
3
Pin
1
MUR860DL
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1735
Rev.1.0,03-Apr-20
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MUR860DL
Thermal Resistance Between junction and case
R
θJ-C
℃/W
5.0
■
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MUR860DL
Approximate 0.31 2500 2500 25000 Reel
■
Characteristics (Typical)
FIG.4: Instantaneous Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (uA)
020406080100
0.01
0.1
1.0
10
100
Tj=125℃
Tj=25℃
Case Temperature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
1.0
50
100
150
2.0
3.0
4.0
5.0
6.0
TC measure point
7.0
8.0
1 2 5 10 20 50 100
30
40
50
60
8.3ms Single
Half Sine-Wave
JEDEC Method
80
20
FIG2:Surge Forward Current Capability
Number of Cycles
Peak Forward Surge Current (A)
10
0.4
0.8
1.2
0.1
0.2
0.5
1.0
10
20
40
5.0
1.6
2.82.0
0
2.4
Instantaneous Forward Current (A)
FIG3: Forward Voltage
Instantaneous Forward Voltage (V)
3.2 3.6 4.0
2.0