MBR2045CT
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1424
Rev.1.0,14-Aug-19
Schottky Diodes
Features
● High frequency operation
● Low forward voltage drop
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MBR2045CT
Device marking code
MBR2045CT
Repetitive Peak Reverse Voltage
V
RRM
V 45
Average Rectified Output Current
@60Hz sine wave, R-load, Tc=126℃
I
O
A
20
Surge(Non-repetitive)Forward Current
@60Hz half sine-wave, 1 cycle, Ta=25℃
I
FSM
A
150
Current Squared Time @1ms≤t≤8.3ms Tj=25℃，
I
2
t
A
2
s
93
Storage Temperature
T
stg
℃
-55 ~ +150
Junction Temperature
Tj
℃
-55 ~ +150
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
TEST
CONDITIONS
MBR2045CT
Maximum instantaneous forward
voltage drop per diode
V
FM
V
I
FM
=10.0A
0.6
Maximum DC reverse current at rated DC
blocking voltage per diode
I
RRM1
mA
V
RM
=V
RRM
Ta=25℃
0.2
I
RRM2
V
RM
=V
RRM
Ta=125℃
100
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MBR2045CT
Thermal Resistance Between junction and case R
θJ-C
℃/W
2.0
COMPLIANT
RoHS
COMPLIANT
RoHS
MBR2045CT
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1424
Rev.1.0,14-Aug-19
■
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MBR2045CT
Approximate 1.9 50 2000 8000 Tube
■
Characteristics (Typical)
Tj=25℃
Tj=125℃
0.001
0.01
0
20
40 60 80 100
0.1
1.0
10
100
FIG.4: Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
0.2 0.3
0.4
0.5
0.6
0.7
0.1
0.2
0.5
1.0
10
20
50
5.0
Ta=25
℃
0.8
0.9 1.0
0.1
0
100
1.1
1.2
Instantaneous Forward Current (A)
FIG3: Forward Voltage
Instantaneous Forward Voltage (V)
2.0
Case Temp erature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
100
150
4.0
8.0
12.0
16.0
20.0
TC measure point
24.0
28.0
Number of Cycles
Peak Forward Surge Current (A)
12 5 1020 50 100
60
90
120
150
8.3ms Single
Half Sine-Wave
JEDEC Method
180
30
0
FIG2:Surge Forward Current Capability