SS12AQ THRU SS110AQ
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2374
Rev.1.0,15-July-19
www.21yangjie.com
Surface Mount Schottky Rectifier
Features
● Low profile package
● Ideal for automated placement
● Guardring for overvoltage protection
● Low power losses, high efficiency
● High forward surge capability
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
● Part no. with suffix “Q” means AEC-Q101 qualified
Typical Applications
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, automotive and polarity
protection applications.
Mechanical Data
●
P
ackage: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Polarity:
Cathode line denotes the cathode end
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
)
PARAMETER SYMBOL UNIT
SS
12AQ 13AQ 14AQ 15AQ 16AQ 18AQ 110AQ
Device marking code
SS
12A 13A 14A 15A 16A 18A 110A
Repetitive peak reverse voltage
V
RRM
V 20 30 40 50 60 80 100
Average rectified output current
@60Hz sine wave, resistance load,
T
L
(FIG1)
I
O
A 1.0
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
I
FSM
A 30
Storage temperature T
STG
℃
-55 ~+150
Junction temperature T
J
℃
-55~+125 -55 ~+150
■Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER SYMBOL
UNIT
TEST
CONDITIONS
SS
12AQ 13AQ 14AQ 15AQ 16AQ 18AQ 110AQ
Maximum instantaneous
forward voltage drop per diode
V
F
V
I
FM
=1.0A
0.50 0.70 0.85
Maximum DC reverse current
at rated DC blocking voltage
per diode@ V
RM
=V
RRM
I
RRM
mA
T
a
=25℃
0.50 0.10
T
a
=100℃
10 5.0
COMPLI
A
NT
RoHS
SS12AQ THRU SS110AQ
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S2374
Rev.1.0,15-July-19
www.21yangjie.com
■
Thermal Characteristics (T
a
=25℃ Unless otherwise specified)
PARAMETER SYMBOL
UNIT
SS
12AQ 13AQ 14AQ 15AQ 16AQ 18AQ 110AQ
Thermal resistance
R
θJ-A
℃/W
65
1)
R
θJ-L
20
1)
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
■
Characteristics (Typical)
0 40 80 120 160
1.0
0.8
0.6
0.4
0.2
0
FIG1：Io-T
L
Curve
Lead Temperature (℃)
Average Rectifield Output Current(A)
SS12AQ-SS14AQ
SS15AQ-SS110AQ
1
0
Peak Forward Surge Current(A)
2
5
10 20 50 100
5
FIG2:Surge Forward Current Capability
Number of Cycles
10
15
20
25
30
35
8.3ms Single Half Sine Wave
JEDEC Method
Instantaneous Forward Current(A)
FIG3: Typical Forward Characteristics
0.01
Instantaneous Forward Voltage (V)
0.4
T
J
=25℃
Pulse width=300us
1% Duty Cycle
0.1
1.0
10
100
0.6 0.8 1.0 1.2 1.4
SS12AQ-SS14AQ
SS15AQ-SS16AQ
SS18AQ-SS110AQ
0.20
FIG4：Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage(%)
Instantaneous Reverse Current(mA)
0
20
40 60 80 100
0.001
T
J
=25℃
100
10
1.0
0.1
0.01
T
J
=100℃
SS12AQ-SS16AQ
SS18AQ-SS110AQ