IRF1407SPbF
IRF1407LPbF
V
DSS
75V
R
DS(on)
0.0078
I
D
100A
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for low-profile
applications.
1 2016-5-26
Symbol Parameter
Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 100
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 70
I
DM
Pulsed Drain Current 520
P
D
@T
A
= 25°C Maximum Power Dissipation 3.8 W
P
D
@T
C
= 25°C Maximum Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 390
mJ
I
AR
Avalanche Current See Fig.15,16, 12a, 12b A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt
4.6
V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Thermal Resistance
Symbol
P
arameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state)
–––
40
D2 Pak
IRF1407SPbF
G D S
Gate Drai
n Source
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up
to Tjmax
Lead
-Free
S
D
G
S
D
G
D
TO-262 Pak
IRF1407LPbF
Base part number Package Type
Standard Pack
Form Quantity
IRF1407LPbF
TO-262 Tube 50
IRF1407LPbF (Obsolete)
IRF1407SPbF D2-Pak Tape and Reel Left 800 IRF1407STRLPbF
Orderable Part Number
HEXFET
®
Power MOSFET
IRF1407S/LPbF
2 2016-5-26
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting T
J
= 25°C, L = 0.13mH, R
G
= 25, I
AS
= 78A, V
GS
=10V. (See fig. 12)
I
SD
78A, di/dt 320A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
Uses IRF1407 data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.0078
V
GS
= 10V, I
D
= 78A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 74 ––– ––– S V
DS
= 25V, I
D
= 78A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=75 V, V
GS
= 0V
––– ––– 250 V
DS
= 60V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– -200 V
GS
= -20V
Q
g
Total Gate Charge ––– 160 250
nC
I
D
= 78A
Q
gs
Gate-to-Source Charge ––– 35 52 V
DS
= 60V
Q
gd
Gate-to-Drain Charge ––– 54 81
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 11 –––
ns
V
DD
= 38V
t
r
Rise Time ––– 150 –––
I
D
=78A
t
d(off)
Turn-Off Delay Time ––– 150 –––
R
G
= 2.5
t
f
Fall Time ––– 140 –––
V
GS
= 10V
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 5600 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 890 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 190 –––
ƒ = 1.0kHz, See Fig. 5
C
oss
Output Capacitance ––– 5800 ––– V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0kHz
C
oss
Output Capacitance ––– 560 ––– V
GS
= 0V, V
DS
= 60V ƒ = 1.0kHz
C
oss eff.
Effective Output Capacitance
––– 1100 ––– V
GS
= 0V, V
DS
= 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 100
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 520
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 78A,V
GS
= 0V
t
rr
Reverse Recovery Time ––– 110 170 ns
T
J
= 25°C ,I
F
= 78A
Q
rr
Reverse Recovery Charge ––– 390 590 nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)