MBR30100CT THRU MBR30200CT
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1156
Rev.1.0,14-Jan-19
Schottky Diodes
Features
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
P
ackage: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity: As marked
Maximum Ratings
(T
a
=25 Unless otherwise specified
PARAMETER SYMBO
L
UNIT
MBR30100CT MBR30150CT MBR30200CT
Device marking code
MBR30100CT MBR30150CT MBR30200CT
Repetitive Peak Reverse Voltage
V
RRM
V 100 150 200
Average Rectified Output Current @60Hz sine
wave, R-load, T
a
=25
I
O
A
30
Surge(Non-repetitive)Forward Current @60H
z
half sine-wave, 1 cycle, T
a
=25
I
FSM
A
250
Current Squared Time @1mst<8.3ms Tj=25℃,
I
2
t
A
2
s
176
Storage Temperature
T
stg
-55 ~ +175
Junction Temperature
T
j
-55 ~ +175
Electrical Characteristics
T
a
=25 Unless otherwise specified
PARAMETER SYMBOL
UNIT TEST CONDIT IONS
MBR30100CT MBR30150CT MBR30200CT
Maximum instantaneous
forward voltage drop per diode
V
FM
V
I
FM
=15.0A
0.8 0.85 0.9
Maximum DC reverse current
at rated DC blocking voltage pe
r
diode
I
RRM1
mA
V
RM
=V
RRM
T
a
=25
0.1
I
RRM2
V
RM
=V
RRM
T
a
=125
20
COMPLIANT
RoHS
MBR30100CT THRU MBR30200CT
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1156
Rev.1.0,14-Jan-19
Thermal Characteristics T
a
=25 Unless otherwise specified
PARAMETER SYMBOL
UNIT
MBR30100CT MBR30150CT MBR30200CT
Thermal
Resistance
Between junction and
case
R
θJ-C
/W
2.0
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MBR30100CT THRU MBR30200CT
Approximate 1.9 50 1000 5000 Tube
Characteristics (Typical)
Number of Cycles
Peak Forward Surge Current (A)
12 5 1020 50 100
100
150
8.3ms Single
Half Sine-Wave
JEDEC Method
300
50
0
FIG2:Surge Forward Current Capability
200
250
Tj=25
Tj=125
0.001
0.01
0
20
40 60 80 100
0.1
1.0
10
100
FIG.4: Instantaneous Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
Case Temperature(℃)
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
200
150
IN DC
5.0
10.0
TC measure point
15.0
20.0
25.0
30.0
35.0
100
Instantaneous Forward Current (A)
FIG3: Forward Voltage
Instantaneous Forward Voltage (V)
0.2 0.3
0.4
0.5
0.6
0.7
0.1
0.2
0.5
1.0
10
20
50
5.0
Ta=25
0.8
0.9 1.0
0.1
0
100V
150V
1.1
1.2
200V
2.0