MBR20100CD THRU MBR20200CD
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B971
Rev.1.1,3-Aug-18
Schottky Diodes
Features
● High frequency operation
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-252
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MBR20100CD MBR20150CD MBR20200CD
Device marking code
MBR20100CD MBR20150CD MBR20200CD
Repetitive Peak Reverse Voltage
V
RRM
V 100 150 200
Average Rectified Output Current @60Hz sine
wave, R-load, T
a
=25℃
I
O
A
20
Surge(Non-repetitive)Forward Current @60H
z
half sine-wave, 1 cycle, T
a
=25℃
I
FSM
A
130
Current Squared Time @1ms≤t<8.3ms
Tj=25℃，
I
2
t
A
2
s
70
Storage Temperature
T
stg
℃
-55 ~ +175
Junction Temperature
T
j
℃
-55 ~ +175
■Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
TEST
CONDITIONS
MBR20100CD MBR20150CD MBR20200CD
Maximum instantaneous forward
voltage drop per diode
V
FM
V
I
FM
=10.0A
0.83 0.87 0.9
Maximum DC reverse current
at rated DC blocking voltage per
diode
I
RRM1
mA
V
RM
=V
RRM
T
a
=25℃
0.1
I
RRM2
V
RM
=V
RRM
T
a
=125℃
20
COMPLIANT
RoHS
Pin 2
Pin
3
Pin
1
MBR20100CD THRU MBR20200CD
2 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B971
Rev.1.1,3-Aug-18
■
Thermal Characteristics （T
a
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MBR20100CD MBR20150CD MBR20200CD
Thermal
Resistance
Between
junction
and case
R
θ
J-C
℃/W
5.0
■
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MBR20100CD THRU MBR20200CD
Approximate 0.32 2500 2500 25000 Reel
■
Characteristics (Typical)
Tj=25℃
Tj=125℃
0.001
0.01
0
20
40 60 80 100
0.1
1.0
10
100
FIG.4: Instantaneous Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Revers e Cu rrent (mA)
12 5 1020 50 100
60
80
100
120
8.3ms Single
Half Sine-Wave
JEDEC Method
140
40
20
FIG2:Surge Forward Current Capability
Number of Cycles
Peak Forward Surge Current (A)
Case Temperature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
200
150
IN DC
5.0
10.0
TC measure point
15.0
20.0
25.0
30.0
35.0
100
Instantaneous Forward Current (A)
FIG3: Forward Voltage
Instantaneous Forward Voltage (V)
0.2 0.3
0.4
0.5
0.6
0.7
0.1
0.2
0.5
1.0
10
20
60
5.0
Ta=25
℃
0.8
0.9 1.0
0.1
0
100V
150V
100
1.1
1.2
200V