Peregrine Semiconductor’s radio frequency

integrated circuits (RFICs) and DC-DC power

management space products are now available

in the e2v high-reliability (Hi-Rel) product

portfolio. This strategic relationship combines

Peregrine’s expertise and proven track record in

Hi-Rel RF and power management products with

e2v’s leadership position in aerospace & defense

qualied semiconductor products.

Leader in RF Innovation

Peregrine Semiconductor Corporation, a Murata

company, is the founder of RF silicon on insulator (SOI)

and is a leading fabless provider of high-performance,

integrated RF solutions. For Hi-Rel applications,

Peregrine designs and manufactures RFICs and power

management products. Peregrine has over 15 years of

ight heritage; the company’s products have been used

in missions to seven planets and several asteroids, along

with providing reliable communications to hundreds of

satellite systems. A Murata company since December

2014, Peregrine holds more than 200 led and pending

patents and has shipped over 2.5 billion units.

Leader in Aerospace & Defense

Bringing life to technology, e2v inc is a leading provider

of specialist technology for high-performance systems

and equipment.

For over 30 years, e2v inc has manufactured high-

reliability semiconductor solutions for leading global

aerospace & defense companies. Through partnerships

with semiconductor manufacturers, e2v supports

complete QML solutions to help customers solve design

challenges. With over 3,600 QML-approved products,

e2v oers one of the largest Hi-Rel product portfolios

on the market.

UltraCMOS® Technology

Advancing RF SOI since 1988, Peregrine delivers the

superior performance, monolithic integration and

reliability required by demanding Hi-Rel designs.

Central to Peregrine’s success is its UltraCMOS®

technology—a patented, advanced form of RF SOI.

For Hi-Rel products, UltraCMOS technology circuitry

is processed on an ultra-thin silicon layer atop a

dielectric sapphire wafer. Variable capacitances in the

junction region are virtually eliminated, reducing the

overall current drain and improving the transistor’s

voltage handling and linearity. UltraCMOS technology

is inherently radiation tolerant. Peregrine’s Hi-Rel

products do not contain the bulk parasitics found in

standard CMOS devices, making latch-up virtually

impossible.

Only UltraCMOS technology enables intelligent

integration—a unique design ability to integrate

RF, digital and analog components onto a single,

monolithic die. This high level of integration results in a

smaller IC, reducing overall design size and the number

of external components required.

Two Leaders:

e2v inc + Peregrine Semiconductor

Peregrine’s Hi-Rel products do not contain the bulk

parasitics found in standard CMOS devices, making

latch-up virtually impossible.

p-channel FET

insulating sapphire substrate

Process

Bulk CMOS Process

silicon dioxide

n-channel FET

p-channel FET

base silicon substrate

silicon dioxide

buried oxide (insulating layer)

n-channel FET

p-epitaxial layer

p+substrate

polysilicon gate

metal

isolation region

n-well contact p-well contact

silicon dioxide

p+ p+ n+ n+ p+n+

n-well p-well