SCT2080KE
N-channel SiC power MOSFET
lOutline
V
DSS
1200V
TO-247
TO-247N
R
DS(on)
(Typ.)
80mΩ
I
D
40A
lFeatures
lInner circuit
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
*1
Package
TO-247
TO-247N
lApplication
Packing
Tube
・Solar inverters
Reel size (mm)
-
・DC/DC converters
Tape width (mm)
-
・Induction heating
Basic ordering unit (pcs)
30
・Motor drives
Packing code
C
C11
Marking
SCT2080KE
lAbsolute maximum ratings (T
a
= 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
V
DSS
1200
V
Continuous drain current
T
c
= 25°C
I
D
*2
40
A
T
c
= 100°C
I
D
*2
28
A
Pulsed drain current
I
D,pulse
*3
80
A
Gate - Source voltage (DC)
V
GSS
-6 to +22
V
Gate - Source surge voltage (ｔ
surge
˂ 300nsec)
V
GSS_surge
*4
-10 to +26
V
Total power dissipation
T
C
=25°C, See Fig.1
P
D
262
W
T
C
=100°C, See Fig.1
130
W
Junction temperature
T
j
175
°C
Range of storage temperature
T
stg
-55 to +175
°C
(1) Gate
(2) Drain
(3) Source
* Body Diode
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TSQ50210-SCT2080KE
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Datasheet
SCT2080KE
Unit
Min.
Typ.
Max.
lElectrical characteristics (T
a
= 25°C)
Parameter
Symbol
Conditions
Values
V
Zero gate voltage
drain current
I
DSS
V
DS
= 1200V, V
GS
= 0V
μA
T
j
= 25°C
-
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
1200
-
-
1
10
T
j
= 150°C
-
2
-
Gate - Source leakage current
I
GSS+
V
GS
= +22V, V
DS
= 0V
-
-
100
nA
nA
Gate threshold voltage
V
GS (th)
V
DS
= V
GS
, I
D
= 4.4mA
1.6
2.8
4.0
V
Gate - Source leakage current
I
GSS-
V
GS
= -6V, V
DS
= 0V
-
-
-100
°C/W
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
R
thJC
-
0.44
0.57
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
Ws/K
R
th2
1.97E-01
C
th2
1.80E-02
R
th3
1.62E-01
C
th3
2.49E-01
R
th1
7.80E-02
K/W
C
th1
5.00E-03
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© 2019 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
2/12
TSQ50210-SCT2080KE
28.Mar.2019 - rev.004
Datasheet