1 C2M0160120D Rev.
D, 10-2019
C2M0160120D
Silicon Carbide Power MOSFET
C2M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benets
• Higher System Efciency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC Converters
• LED Lighting Power Supplies
Package
TO-247-3
Part Number Package
C2M0160120D TO-247-3
V
DS
1200 V
I
D
@
25˚C
18 A
R
DS(on)
160 mΩ
Maximum Ratings (T
C
= 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
V
DSmax
Drain - Source Voltage 1200 V
V
GS
=
0 V, I
D
= 100 μA
V
GSmax
Gate - Source Voltage -10/+25 V Absolute maximum values
V
GSop
Gate - Source Voltage -5/+20 V Recommended operational values
I
D
Continuous Drain Current
18
A
V
GS
= 20 V, T
C
= 25˚C
Fig. 19
12
V
GS
= 20 V, T
C
= 100˚C
I
D(pulse)
Pulsed Drain Current 40 A
Pulse width t
P
limited by T
jmax
Fig. 22
P
D
Power Dissipation 125 W T
C
=25˚C , T
J
= 150 ˚C Fig. 20
T
J
, T
stg
Operating Junction and Storage Temperature
-55 to
+150
˚C
T
L
Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s
M
d
Mounting Torque
1
8.8
Nm
lbf-in
M3 or 6-32 screw
2 C2M0160120D Rev.
D, 10-2019
Electrical Characteristics (T
C
= 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V
(BR)DSS
Drain-Source Breakdown Voltage 1200 V V
GS
=
0 V, I
D
= 100 μA
V
GS(th)
Gate Threshold Voltage
2.0 2.9 4
V
V
DS
= V
GS
, I
DS
= 2.5 mA
Fig. 11
2.4
V
V
DS
= V
GS
, I
DS
= 2.5 mA, T
J
= 150ºC
I
DSS
Zero Gate Voltage Drain Current 1 100 μA V
DS
= 1200 V, V
GS
= 0 V
I
GSS
Gate-Source Leakage Current 250 nA V
GS
= 20 V, V
DS
= 0 V
R
DS(on)
Drain-Source On-State Resistance
160 196
mΩ
V
GS
= 20 V, I
D
= 10 A
Fig. 4, 5, 6
290 V
GS
= 20 V, I
D
= 10A, T
J
= 150ºC
g
fs
Transconductance
3.8
S
V
DS
=
20 V, I
DS
=
10 A
Fig. 7
5.3 V
DS
=
20 V, I
DS
=
10 A, T
J
= 150ºC
C
iss
Input Capacitance 606
pF
V
GS
= 0 V
V
DS
= 1000 V
f = 1 MHz
V
AC
= 25 mV
Fig. 17,
18
C
oss
Output Capacitance 55
C
rss
Reverse Transfer Capacitance 5
E
oss
C
oss
Stored Energy 28 μJ Fig. 16
E
AS
Avalanche Energy, Single Pluse 600 mJ I
D
= 10A, V
DD
= 50V Fig. 29
E
ON
Turn-On Switching Energy 121
μJ
V
DS
= 800 V, V
GS
= -5/20 V, I
D
= 10A, R
G(ext)
=
2.5Ω, L= 434μH
Fig. 25
E
OFF
Turn Off Switching Energy 48
t
d(on)
Turn-On Delay Time 7
ns
V
DD
= 800 V, V
GS
= -5/20 V
I
D
= 10 A
R
G(ext)
= 2.5 Ω, R
L
= 80 Ω
Timing relative to V
DS
Per IEC60747-8-4 pg 83
Fig. 27
t
r
Rise Time 9
t
d(off)
Turn-Off Delay Time 13
t
f
Fall Time 14
R
G(int)
Internal Gate Resistance 6.5 Ω f = 1 MHz
,
V
AC
=
25 mV
Q
gs
Gate to Source Charge 11
nC
V
DS
= 800 V, V
GS
= -5/20 V
I
D
= 10 A
Per IEC60747-8-4 pg 21
Fig. 12Q
gd
Gate to Drain Charge 17
Q
g
Total Gate Charge 40
Reverse Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
SD
Diode Forward Voltage
3.9
V
V
GS
= -5 V, I
F
=
5 A
Fig. 8,9, 10
3.5 V
GS
= -5V, I
F
=
5 A,
T
J
= 150 ºC
I
S
Continuous Diode Forward Current 25 A T
C
= 25˚C Note 1
t
rr
Reverse Recovery Time 20 ns
V
GS
= - 5 V, I
SD
= 10 A, V
R
= 800 V
dif/dt = 2400 A/µs
Note 1
Q
rr
Reverse Recovery Charge 192 nC
I
rrm
Peak Reverse Recovery Current 16 A
Note (1): When using SiC Body Diode the maximum recommended V
GS
= -5V
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
R
θJC
Thermal Resistance from Junction to Case 0.9 1.0
K/W Fig. 21
R
θJA
Thermal Resistance From Junction to Ambient 40