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Copyright © 2019 Marki Microwave, Inc. | Rev. A
BROADBAND AMPLIFIER AMM-6702
Page 2
Frequency 20 to 55 GHz
Functional Diagram
Biasing and Operation
RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm
sources and loads. DC blocking capacitors are included on-chip, and are not required externally.
Vg – Negative gate voltage applied at a Vg pad is required to keep DC current consumption at a safely usable level. Negative gate
bias must be applied before applying a positive drain voltage at the Vd pads. The 4 Vg pads are connected through large resistors
on-chip, so gate bias can be to any Vg pad to apply gate bias. We recommend -0.6 V gate bias for efficient high-gain LO drive. A
more negative gate bias will provide lower gain with lower power consumption, and a less negative gate bias will provide higher gain
and higher power consumption. Output power is only marginally dependent on gate bias.
Vd- Each Vd pad supplies the drain voltage to a different stage of this amplifier and can safely and functionally handle supply
voltages between 2 and 4 Volts. Apply negative Vg before applying positive Vd.
DC/RF Ground – The back of the chip should be connected to a low noise RF and DC ground with very low electrical and thermal
resistance for high frequency operation and thermal heat sinking.