Passive MMIC High Frequency Diplexer MDPX-2330
Page 1
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
Features
26GHz Crossover Point
Low <1dB typical Insertion Loss in Passband
High Stop Band Suppression
RoHS Compliant
MDPX-2330.S3P
Electrical Specifications - Specifications guaranteed +25C for chip (CH) package, measured in a 50Ω system.
Parameter
Frequency Range (GHz)
Min
Typ
Max
Low Pass Filter
Pass Band Insertion Loss (dB)
DC to 23
0.5
Stop Band Rejection (dB)
39 to 60
26
35
Pass Band Return Loss (dB)
DC to 23
10
18
High Pass Filter
Pass Band Insertion Loss (dB)
30 to 60
0.8
Stop Band Rejection (dB)
DC to 15
23
45
Pass Band Return Loss (dB)
30 to 60
8
14
Common Port Return Loss (dB)
DC to 23
10
24
30 to 60
8
14
Isolation (dB)
DC to 13
27
36
13 to 23
20
30 to 40
21.5
40 to 60
30
32
Impedance (Ω)
50
Part Number Options
Package Styles
Examples
Chip
1-2
(RoHS)
CH
MDPX-2330CH
MDPX-2330
(Model)
CH
(Package)
1
Chip package connects to external circuit through wire bondable gold pads.
2
Note: For port locations and I/O designations, refer to the drawings on page 2 of this document.
The MDPX-2330 is a broadband passive MMIC diplexer, a combination
high pass and loss pass filter, capable of multiplexing low frequency DC
to 23GHz and high frequency 30 to 60GHz signals. Passive GaAs MMIC
technology allows production of smaller filter constructions that replace
larger form factor circuit board constructions. Tight fabrication tolerances
allow for less unit to unit variation than traditional filter technologies. The
MDPX-2330 is available as a wire bondable chip. Low unit to unit
variation allows for accurate simulations using the provided S3P file
taken from measured production units.
Passive MMIC High Frequency Diplexer MDPX-2330
Page 2
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
1. CH Substrate material is .004 thick GaAs.
2. I/O traces finish is 5 microns Au. Ground plane finish is 4 microns Au.
3. Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the
minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).