215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
Copyright © 2019 Marki Microwave, Inc. | Rev. C
BROADBAND AMPLIFIER AMM-6702
The AMM-6702 is a broadband MMIC LO buffer amplifier that
efficiently provides high gain and output power over a 20-55 GHz
frequency band. It is designed to provide a strong, flat output power
response when driven with an input power at 0 dBm. It has built-in
DC blocking capacitors on the input and output.
Features
High 25+ dB Gain
Strong, Flat 20+ dBm Output Power Response
High 20%+ PAE
Unconditionally Stable
Electrical Specifications - Specifications guaranteed from -55 to +100C, measured in a 50Ω system. All bare die are
100% DC tested and 100% visual inspected. RF testing is performed on a sample basis to verify
conformance to datasheet guaranteed specifications. Consult factory for more information.
Parameter
Frequency
Typ
(GHz)
Saturated Output Power (dBm)
20 to 55
+22
Small Signal Gain (dB)
28
Input Return Loss (dB)
10
Output Return Loss (dB)
12
Noise Figure (dB)
6
Bias Requirements, External (mA)
1
Vd: +3.0 / Vg: -0.6 Volts
130
Vd: +3.0 / Vg: -0.5 Volts
180
1
under no RF input power
See page 7 for minimum performance specs of AMM7602UC connectorized modules
Part Number Options
Model Number
Description
Green
Status
Product
Lifecycle
Export
Classification
AMM-6702CH
Chip
RoHS
Active
EAR99
AMM-6702UC
Module
RoHS
Active
EAR99
Revision History
Revision Code
Revision Date
Comment
-
October 2018
Datasheet Initial Release
A
January 2019
AMM-6702UC Release, additional data
B
February 2019
Updated Export Classification
C
March 2019
Updated Module Production Specs
Bare Die
Module
215 Vineyard Court, Morgan Hill, CA 95037 | Ph: 408.778.4200 | Fax 408.778.4300 | info@markimicrowave.com
Copyright © 2019 Marki Microwave, Inc. | Rev. C
BROADBAND AMPLIFIER AMM-6702
Page 2
Frequency 20 to 55 GHz
Functional Diagram
Biasing and Operation
RF In / RF Out – Input and output signals should be connected by 50 ohm microstrip or coplanar traces to well matched 50 ohm
sources and loads. DC blocking capacitors are included on-chip, and are not required externally.
Vg – Negative gate voltage applied at a Vg pad is required to keep DC current consumption at a safely usable level. Negative gate
bias must be applied before applying a positive drain voltage at the Vd pads. The 4 Vg pads are connected through large resistors
on-chip, so gate bias can be to any Vg pad to apply gate bias. We recommend -0.6 V gate bias for efficient high-gain LO drive. A
more negative gate bias will provide lower gain with lower power consumption, and a less negative gate bias will provide higher gain
and higher power consumption. Output power is only marginally dependent on gate bias.
Vd- Each Vd pad supplies the drain voltage to a different stage of this amplifier and can safely and functionally handle supply
voltages between 2 and 4 Volts. Apply negative Vg before applying positive Vd.
DC/RF Ground – The back of the chip should be connected to a low noise RF and DC ground with very low electrical and thermal
resistance for high frequency operation and thermal heat sinking.