SSD15N10-C
15A, 100V, R
DS(ON)
110mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
24-Oct-2018 Rev. F Page 1 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
TO
-
252(D
-
Pack)
A
C
D
N
O
P
G E
FHK
J
M
B
15N10
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15N10-C is the highest performance trench
N-ch MOSFETs with extreme high cell density, which
provide excellent R
DSON
and gate charge for most of
the synchronous buck converter applications.
The SSD15N10-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING
PACKAGE INFORMATION
Package MPQ Leader Size
TO-252 2.5K 13 inch
ORDER INFORMATION
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Drain-Source Voltage V
DS
100 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current,V
GS
@10V
1
T
C
=25°C
I
D
15 A
T
C
=100°C 10.5 A
Pulsed Drain Current
3
I
DM
30 A
Power Dissipation
T
C
=25°C
P
D
44.6 W
T
A
=25°C 2 W
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 ~ 150 °C
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
1
R
θJA
62.5
°C / W Maximum Thermal Resistance Junction-Ambient
2
110
Maximum Thermal Resistance Junction-Case R
θJC
2.8
Part Number Type
SSD15N10-C Lead (Pb)-free and Halogen-free
Date Code
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
6.
3
6.9
J
2.3 REF.
B
4.95
5.53
K
0.89 REF.
C
2.1
2.5
M
0.45
1.14
D
0.4
0.9
N
1.55 Typ.
E
6
7.7
O
0
0.15
F
2.90 REF
P
0.58 REF.
G
5.4
6.4
H
0.
6
1.2
1
Gate
3
Source
2
Drain
SSD15N10-C
15A, 100V, R
DS(ON)
110mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
24-Oct-2018 Rev. F Page 2 of 4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise specified)
Parameter Symbol Min.
Typ.
Max.
Unit
Test conditions
Drain-Source Breakdown Voltage BV
DSS
100 - - V V
GS
=0, I
D
=250µA
Gate Threshold Voltage V
GS(th)
1.0 - 2.5 V V
DS
=V
GS
, I
D
=250µA
Gate-Source Leakage Current I
GSS
- - ±100
nA V
GS
= ±20V
Drain-Source Leakage Current I
DSS
- - 1
µA
V
DS
=80V, V
GS
=0, T
J
=25°C
- - 5 V
DS
=80V, V
GS
=0, T
J
=55°C
Static Drain-Source On-Resistance
4
R
DS(ON)
- - 110
mΩ
V
GS
=10V, I
D
=8A
- - 120 V
GS
=4.5V, I
D
=6A
Total Gate Charge
2
Q
g
- 26.2
-
nC
I
D
=10A
V
DS
=80V
V
GS
=10V
Gate-Source Charge Q
gs
- 4.6 -
Gate-Drain (“Miller”) Change Q
gd
- 5.1 -
Turn-on Delay Time
2
T
d(on)
- 4.2 -
nS
V
DS
=50V
I
D
= 10A
V
GS
=10V
R
G
=3.3Ω
Rise Time T
r
- 8.2 -
Turn-off Delay Time T
d(off)
- 35.6
-
Fall Time T
f
- 9.6 -
Input Capacitance C
iss
- 1535
-
pF
V
GS
=0
V
DS
=15V
f=1.0MHz
Output Capacitance C
oss
- 60 -
Reverse Transfer Capacitance C
rss
- 37 -
Gate Resistance R
g
- 2 - Ω f=1.0MHz
Source-Drain Diode
Continuous Source Current
1
I
S
- - 15 A
Pulsed Source Current
3
, I
SM
- - 30 A
Forward On Voltage
2
V
SD
- - 1.2 V V
GS
=0V , I
S
=8A , T
J
=25°C
Reverse Recovery Time t
rr
- 37 - nS
I
F
=10A , dI/dt=100A/µs ,
T
J
=25°C
Reverse Recovery Charge Q
rr
- 27.3
- nC
Notes:
1. The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2. When mounted on minimum pad of copper.
3. The power dissipation is limited by 150°C juncti on temperature.
4. The data tested by pulsed, pulse width
≦
300us, duty cycle
≦
2%