VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 10 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 5 A
V
R
200 V
V
F
at I
F
0.87 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Common cathode
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per leg
I
F(AV)
5
A
total device Rated V
R
, T
C
= 149 °C 10
Non-repetitive peak surge current per leg I
FSM
50
Peak repetitive forward current per leg I
FM
Rated V
R
, square wave, 20 kHz
T
C
= 149 °C
10
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 5 A, T
J
= 125 °C - 0.87 0.99
I
F
= 10 A, T
J
= 125 °C - 1.02 1.20
I
F
= 10 A - 1.12 1.25
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 8 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-MUR1020CTPbF, VS-MUR1020CT-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
2
Document Number: 94076
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-24-
T
J
= 125 °C - 35 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.3 -
A
T
J
= 125 °C - 5.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 33 -
nC
T
J
= 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
--5
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
--50
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AB MUR1020CT