Maple Semiconductor CO., LTD http://www.maplesemi.com
SLP7N65C / SLF7N65C
Rev. 01 January 2017
SLP7N65C/SLF7N65C
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 7.0A, 650V, R
DS(on) typ.
= 1.2Ω@V
GS
= 10 V
- Low gate charge ( typical 25nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter SLP7N65C SLF7N65C Units
V
DSS
Drain-Source Voltage 650 V
I
D
Drain Current - Continuous (T
C
= 25℃)7.07.0 *A
- Continuous (T
C
= 100℃)4.24.2 *A
I
DM
Drain Current - Pulsed
(Note 1)
28
28 *
A
V
GSS
Gate-Source Voltage
±
30
V
EAS Single Pulsed Avalanche Energy
(Note 2)
230 mJ
I
AR
Avalanche Current
(Note 1)
7.0 A
E
AR
Repetitive Avalanche Energy
(Note 1)
14.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25℃) 147
39
W
- Derate above 25℃ 1.18 3.21 W/℃
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 ℃
T
L
Maximum lead temperature for soldering purposes,
300 ℃
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter SLP7N65C SLF7N65C Units
R
θJC
Thermal Resistance, Junction-to-Case 0.85 0.31 ℃/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 ℃/W
* Drain current limited by maximum junction temperature.
G
S
D
G D S
G D S
TO-220 TO-220F