SLB7N65C / SLI7N65C
Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 01 January 2017
SLB7N65C / SLI7N65C
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Features
- 7.0A, 650V, R
DS(on) typ.
= 1.2Ω@V
GS
= 10 V
- Low gate charge ( typical 25nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter SLB7N65C / SLI7N65C Units
V
DSS
Drain-Source Voltage 650 V
I
D
Drain Current - Continuous (T
C
= 25℃)7.0A
- Continuous (T
C
= 100℃)4.2A
I
DM
Drain Current - Pulsed
(Note 1)
28 A
V
GSS
Gate-Source Voltage
±
30
V
EAS Single Pulsed Avalanche Energy
(Note 2)
230 mJ
I
AR
Avalanche Current
(Note 1)
7.0 A
E
AR
Repetitive Avalanche Energy
(Note 1)
14.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25℃) 147 W
- Derate above 25℃ 1.18 W/℃
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 ℃
T
L
Maximum lead temperature for soldering purposes,
300 ℃
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter
Typ Max
Units
R
θJC
Thermal Resistance, Junction-to-Case -- 0.85 ℃/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. -- 0.5 ℃/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 ℃/W
* Drain current limited by maximum junction temperature.
G
S
D
D
G D S
I2-PAK
G S
D2-PAK
SLB7N65C / SLI7N65C
Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 01 January 2017
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 uA 650 -- -- V
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 uA, Referenced to 25℃ -- 0.65 -- V/℃
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650 V, V
GS
= 0 V -- -- 1 uA
V
DS
= 520 V, T
C
= 125℃ -- -- 10 uA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 uA 2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3.5 A -- 1.2 1.4 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 3.5 A
(Note 4)
-- 8.5 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1000 -- pF
C
oss
Output Capacitance -- 110 -- pF
C
rss
Reverse Transfer Capacitance -- 12 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 325 V, I
D
= 7.0 A,
R
G
= 25 Ω
(Note 4, 5)
--
20
-- ns
t
r
Turn-On Rise Time -- 50 -- ns
t
d(off)
Turn-Off Delay Time -- 80 -- ns
t
f
Turn-Off Fall Time -- 70 -- ns
Q
g
Total Gate Charge
V
DS
= 520 V, I
D
= 7.0 A,
V
GS
= 10 V
(Note 4, 5)
-- 25 -- nC
Q
gs
Gate-Source Charge -- 4.7 -- nC
Q
gd
Gate-Drain Charge -- 12.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.0 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 28 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 7.0 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 7.0 A, -- 350 -- ns
Q
rr
Reverse Recovery Charge dI
F
/ dt = 100 A/us
(Note 4)
-- 3.3 -- uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
AS
= 7.0A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
7.0A, di/dt 200A/us, V
DD
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width 300us, Duty cycle 2%
5. Essentially independent of operating temperature