SSF3018
Feathers:
ID=60A
BV=100V
Rdson=15mohm
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 1of5
Absolute Maximum Ratings
Parameter Max. Unit
s
I
D
@T
c
=25ْ C Continuous drain current,VGS@10V
60
I
D
@T
c
=100ْC Continuous drain current,VGS@10V
50
I
DM
Pulsed t ①
A
drain curren
240
P
D
@T
C
=25ْC Power dissipation
147 W
Linear derating factor
2.0 W /ْ C
V
GS
Gate-to-Source voltage ±20 V
E
AS
Single p rgy ② 480 ulse avalanche ene mJ
E Re gy
AR
petitive avalanche ener TBD
T
J
–55 to +150
T
STG
Operating Junction and
Storage Temperature Range
ْC
Therm ce
Parameter Min. Typ. Max. Units
al Resistan
R
θJC
Junction-to-case
— 0.85
—
ْC/W
Electrical Characteris =25 ْC(unless otherwise cified
. Typ. ax. Un Test Conditions
tics @TJ spe )
Parameter Min M its
BV
DSS
Drain-to-Source breakdown voltage 100 — — V V
GS
=0V,I
D
=250μA
R
DS(on)
Static Drain-to-Source on-resistance — 13.8 15 mΩ V
GS
=10V,I
D
=30A
V
GS(th)
Gate ltage V threshold vo 2.0 4.0 V
DS
=V
GS
,I
D
=250μA
g
fs
Forward transconductance 42 — S V
DS
=10V,I
D
=30A
—— 1 V
DS
=100V,V
GS
=0V
I
DSS
Drai ent
— 1
n-to-Source leakage curr
— 00
μA
V
DS
=100V,
V
GS
=0V,T
J
=150ْC
Gate-to-Source forward leakage 100 — — V
GS
=20V
I
GSS
Gate-to-Source reverse leakage �� — -100
nA
V
GS
=-20V
Q
g
Total gate charge — 49 —
Q
gs
Gate-to-Source charge — 15 —
nC
V
I
D
=10A
DS
=0.5V
DSS
Description:
The SSF3018 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 13.8mohm.
Application:
Power switching application
SSF3018 TOP View (TO220)
SSF3018
Q
gd
Gate- arge
V
to-Drain("Miller") ch — 11 —
GS
=10V
t
d(on)
Turn-on delay time — 27 —
t
r
Rise time — 40 —
t
d(off)
Turn-Off delay time — 43 —
t
f
Fall time — 37 —
nS
V
V
DS
=0.5V
DSS
I
D
=10A
R
G
=15Ω
GS
=10V
C
iss
Input capacitance — 2650 —
C
s
Outp
os
ut capacitance — 335 —
C
rss
Reve ance
pF
f
rse transfer capacit — 60 —
V
GS
=0V
V
DS
=25V
=1.0MHZ
Sourc ain Rating
Parameter Min. Typ. Max. Units Test Conditions
e-Dr s and Characteristics
Continuous Source Current.
©Silikron Semiconductor CO. LTD. 2009.7.15 Version: 1.0 page 2of5
I
S
( Body Diode)
— — 60
I
SM
P
(B
MOSFET symbol
showing
p-n e.
ulsed Source Current .
ody Diode) ①
— — 240
A
the
integral reverse
junction diod
V
SD
0A ③
Diode Forward Voltage — — 1.3 V
T
J
=25ْC,I
S
=3 ,V
GS
=0V
t
rr
Re e nS verse Recovery Tim
－
59 —
Q
rr
R nC
V, V
R
=0.5*V
DSS
everse Recovery Charge
－
112 —
I
F
=0.5*I
S
, V
GS
=0
di/dt=100A/μs ③
t
on
Forward Turn-on Time Intrinsic turn-on time is ne ble (tugligi rn-on is dominated by Ls + LD)
test circuit:
Gate charge
EAS test circuits:
BV
dss
Notes:
t condition: L =0.3mH, ID = 37A, VDD = 50V
① Repetitive rating; pulse width limited by max junction temperature.
② Tes
③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C