THRU
BZT52C39
T
200 mW
Zener Diode
2.4 to 39 Volts
Features
x Planar Die Construction
x
200mW PowerDissipation
Absolute Maximum Ratings
Symbol Parameter Rating Unit
P
D
Power dissipation 200 mW
T
J
Junction Temperature -65 to +150
к
T
STG
Storage Temperature Range -65 to +150
к
Absolute Maximum Ratings
Symbol Parameter Rating Unit
R
thJA
Thermal Resistance Junction to
Ambient
625
к
/W
Electrical Characteristics
Symbol Parameter Rating Unit
V
F
Maximum Forward Voltage
(I
F
=10mAdc)
0.9 V
BZT52C2V4
T
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .059 .067 1.50 1.70
B .043 .051 1.10 1.30
C .030 .033 0.75 0.85
D .001 .003 0.01 0.07
E .010 .014 0.25 0.35
F .003 .006 0.08 0.15
G .020 .028 0.50 0.70
H .020 .031 0.51 0.77
SOD523
A
B
E
C
H
G
D
F
TM
Micro Commercial Components
1 of 3
• Lead Free Finish/RoHS Compliant ("P" Suffix
designates RoHS Compliant. See ordering information)
Revision: D 2013/01/01
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Halogen free available upon request by adding suffix "-HF"
ELECTRICAL CHARACTERISTICS @25
q
C
(1) Tested with pulses, period = 5ms, pulse width=300us
(2) f=1KHz
ZE
NER VOLTAGE
V
Z
(1)
VOLTS
Maximum Zener
Impedance
(2)
Z
ZT
(OHMS)
Maximum Zener
Impedance
(2)
Z
ZK
(OHMS)
REVERSE
CURRENT
I
R
(Max) @ V
R
Typical
Temperature
Coefficent
@ I
ZTC
Type
Min. Nom Max. I
ZT
(mA)
Max. I
ZK
(mA) Max.
µA
V
mV/ć
Marking
BZT52C2V4T 2.28 2.4 2.56 5 100 1.0 600 50 1.0 -3.5 0 Z11
BZT52C2V7T 2.5 2.7 2.9 5 100 1.0 600 20 1.0 -3.5 0 Z12
BZT52C3V0T 2.8 3.0 3.2 5 95 1.0 600 10 1.0 -3.5 0 Z13
BZT52C3V3T 3.1 3.3 3.5 5 95 1.0 600 5 1.0 -3.5 0 Z14
BZT52C3V6T 3.4 3.6 3.8 5 90 1.0 600 5 1.0 -3.5 0 Z15
BZT52C3V9T 3.7 3.9 4.1 5 90 1.0 600 3 1.0 -3.5 0 Z16
BZT52C4V3T 4.0 4.3 4.6 5 90 1.0 600 3 1.0 -3.5 0 Z17
BZT52C4V7T 4.4 4.7 5.0 5 80 1.0 500 3 2.0 -3.5 0.2 Z1
BZT52C5V1T 4.8 5.1 5.4 5 60 1.0 480 2 2.0 -2.7 1.2 Z2
BZT52C5V6T 5.2 5.6 6.0 5 40 1.0 400 1 2.0 -2.0 2.5 Z3
BZT52C6V2T 5.8 6.2 6.6 5 10 1.0 150 3 4.0 0.4 3.7 Z4
BZT52C6V8T 6.4 6.8 7.2 5 15 1.0 80 2 4.0 1.2 4.5 Z5
BZT52C7V5T 7.0 7.5 7.9 5 15 1.0 80 1 5.0 2.5 5.3 Z6
BZT52C8V2T 7.7 8.2 8.7 5 15 1.0 80 0.7 5.0 3.2 6.2 Z7
BZT52C9V1T 8.5 9.1 9.6 5 15 1.0 100 0.5 6.0 3.8 7.0 Z8
BZT52C10T 9.4 10 10.6 5 20 1.0 150 0.2 7.0 4.5 8.0 Z9
BZT52C11T 10.4 11 11.6 5 20 1.0 150 0.1 8.0 5.4 9.0 Y1
BZT52C12T 11.4 12 12.7 5 25 1.0 150 0.1 8.0 6.0 10.0 Y2
BZT52C13T 12.4 13 14.1 5 30 1.0 170 0.1 8.0 7.0 11.0 Y3
BZT52C15T 13.8 15 15.6 5 30 1.0 200 0.1 10.5 9.2 13.0 Y4
BZT52C16T 15.3 16 17.1 5 40 1.0 200 0.1 11.2 10.4 14.0 Y5
BZT52C18T 16.8 18 19.1 5 45 1.0 225 0.1 12.6 12.4 16.0 Y6
BZT52C20T 18.8 20 21.2 5 55 1.0 225 0.1 14.0 14.4 18.0 Y7
BZT52C22T 20.8 22 23.3 5 55 1.0 250 0.1 15.4 16.4 20.0 Y8
BZT52C24T 22.8 24 25.6 5 70 1.0 250 0.1 16.8 18.4 22.0 Y9
BZT52C27T 25.1 27 28.9 2 80 0.5 300 0.1 18.9 21.4 25.3 Y10
BZT52C30T 28 30 32 2 80 0.5 300 0.1 21.0 24.4 29.4 Y11
BZT52C33T 31 33 35 2 80 0.5 325 0.1 23.1 27.4 33.4 Y12
BZT52C36T 34 36 38 2 90 0.5 350 0.1 25.2 30.4 37.4 Y13
BZT52C39T 37 39 41 2 130 0.5 350 0.1 27.3 33.4 41.2 Y14
BZT52C2V4T THRU BZT52C39T
MCC
www.mccsemi.com
TM
Micro Commercial Components
2 of 3
Revision: D 2013/01/01
T , AMBIENT TEMPERATURE, °C
A
Fi
g
. 1. Power Deratin
g
Curve
P , POWER DISSIPATION (mW)
D
200
100
0
300
0
100
200