Applications
High efficiency DC/DC Converters
Synchronous Rectification
UPS Inverter
FTP30N1
P6L, FTB30N1P6L
Ordering Information
Part Number Package Marking
FTP30N1P6L TO-220-3L
30N1P6L
FTB30N1P6L
TO-263-2L
30N1P6L
1 /8
Rev 3.0 Feb.2017
ARK Microelectronics Co., Ltd.
www.ark-micro.com
BV
DSS
R
DS(ON),max.
I
D
[2]
30V 1.6mΩ 279A
30V N-ch Power MOSFET
General Features
Proprietary New Trench Technology
R
DS(ON),typ.
=1.3mΩ@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
Absolute Maximum Ratings T
C
=25℃ unless otherwise specified
Symbol Parameter Value Unit
V
DSS
Drain-to-Source Voltage
[1]
30
V
V
GSS
Gate-to-Source Voltage ±20
I
D
Continuous Drain Current
[2]
279
A
Continuous Drain Current
[3]
192
Continuous Drain Current at T
C
=100℃
[2]
197
I
DM
Pulsed Drain Current at V
GS
=10V
[2,4]
1114
E
AS
Single Pulse Avalanche Energy
(V
DD
=15V, V
GS
=10V, R
G
=25Ω, L=1mH)
338 mJ
P
D
Power Dissipation 221 W
Derating Factor above 25℃
1.5
W/℃
T
L
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
℃
T
J
& T
STG
Operating and Storage Temperature Range -55 to 175
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit
R
θJC
Thermal Resistance, Junction-to-Case 0.68
℃/W
R
θJA
Thermal Resistance, Junction-to-Ambient 63
Electrical Characteristics
OFF Characteristics T
J
=25℃ unless otherwise specified
Symbol
Parameter Min.
Typ.
Max.
Unit
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
30 V V
GS
=0V, I
D
=250uA
I
DSS
Drain-to-Source Leakage Current 1 uA V
DS
=24V, V
GS
=0V
I
GSS
Gate-to-Source Leakage Current ±100
nA V
GS
=±20V, V
DS
=0V
ON Characteristics T
J
=25℃ unless otherwise specified
Symbol
Parameter Min.
Typ.
Max.
Unit
Test Conditions
R
DS(ON)
Static Drain-to-Source
On-Resistance
-- 1.3 1.6 mΩ V
GS
=10V, I
D
=80A
[5]
-- 1.6 2.2 mΩ V
GS
=4.5V, I
D
=80A
[5]
V
GS(TH)
Gate Threshold Voltage 1.0 -- 3.0 V V
DS
=V
GS
, I
D
=250uA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
C
iss
Input Capacitance
5.0
nF
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
C
rss
Reverse Transfer Capacitance
0.56
C
oss
Output Capacitance
1.1
R
g
Gate Series Resistance
1.3
Ω f=1.0MH
Z
Q
g
Total Gate Charge
68
nC
V
DD
=15V,
I
D
=80A, V
GS
=4.5V
123
V
DD
=15V,
I
D
=80A, V
GS
=10V
Q
gs
Gate-to-Source Charge
12
Q
gd
Gate-to-Drain (Miller) Charge
39
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
t
d(on)
Turn-on Delay Time 927
ns
V
DD
=15V
I
D
=80A
V
GS
=10V
R
G
=2.5Ω
t
rise
Rise Time 16
t
d(off)
Turn-off Delay Time 260
t
fall
Fall Time 26
Source-Drain Body Diode Characteristics T
J
=25℃ unless otherwise specified
Symbol
Parameter Min
Typ.
Max.
Unit
Test Conditions
I
SD
Continuous Source Current
[2]
279
A Maximum Ratings
V
SD
Diode Forward Voltage 0.9 1.2 V I
S
=80A, V
GS
=0V
t
rr
Reverse Recovery Time 102 ns
V
GS
=0V
I
F
=20A,di/dt=100A/µs
Q
rr
Reverse Recovery Charge 180 nC
Note:
[1] T
J
=25℃ to 175℃
[2] Silicon limited current only
[3] Package limited current
[4] Repetitive rating, pulse width limited by maximum junction temperature.
[5] Pulse width≤380µs; duty cycle≤2%.
2 /8
Rev 3.0 Feb.2017
ARK Microelectronics Co., Ltd.
www.ark-micro.com
FTP30N1P6L, FTB30N1P6L