ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 1.0 May. 2016
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350V N+P Dual Channel MOSFETs
General Features
Proprietary Advanced Planar Technology
Rugged Polysilicon Gate Cell Structure
Fast Switching Speed
RoHS Compliant
Halogen-free available
Applications
Power Management
Load Switch
Motor Driver
Ordering Information
Absolute Maximum Ratings(T
A
=25°C unless otherwise noted)
Drain-to-Source Voltage
[1]
300us Pulsed Drain Current Tested
[2]
Operating and Storage Temperature Range
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
SOP-8
D2
D2
D1
D1
S1
G1
S2
G2
D1
S1
G1
D2
S2
G2