WSB5557Z
Will Semiconductor Ltd. 1 Aug, 2019 - Rev. 1.2
WSB5557Z
Schottky Barrier Diode
Features
100mA Average rectified forward current
Low forward voltage
Ultra-low leakage current
Small package DFN0603-2L
Applications
Low Current rectification
Absolute maximum ratings
Electronics characteristics (T
A
=25
o
C)
Http://www.sh-willsemi.com
DFN0603-2L(Bottom View)
Circuit
Marking
Parameter Symbol Value Unit
Reverse voltage (repetitive peak) V
RM
30 V
Reverse voltage (DC) V
R
30 V
Average rectified forward current
I
O
100 mA
Peak forward surge current (8.3ms single sine pluse)
I
FSM
3 A
ESD Rating
HBM 8000 V
MM 300 V
Junction temperature T
J
150
O
C
Operating temperature Topr -40 ~ 150
O
C
Storage temperature Tstg -40 ~ 150
O
C
Parameter Symbol Condition Min. Typ. Max. Unit
Reverse Voltage V
R
I
R
=100uA 30 V
Forward Voltage V
F
I
F
=1mA 0.36 V
I
F
=10mA 0.4 0.44 V
Reverse current I
R
V
R
=10V 0.3 uA
V
R
=30V 0.5 uA
Junction capacitance C
J
V
R
=5V, F=1MHz 7 pF
Thermal Resistance R
θ(JA)
Junction to Ambient
(1)
500
O
C /W
WSB5557Z
Will Semiconductor Ltd. 2 Aug, 2019 - Rev. 1.2
Order Information
Note 1：Mounted on a 1inch
2
FR-4 board with 1oz Copper, operating to steady state.
Note 2：*= Month Code(A~Z); H= Device code;
Typical characteristics (Ta=25
o
C, unless otherwise noted)
Fig.1 Forward voltage vs. Forward current Fig.2 Reverse current vs. Reverse voltage
Fig.3 Junction capacitance vs. Reverse voltage
Device Package Marking Shipping
WSB5557Z-2/TR DFN0603-2L *H
(2)
10000/Reel&Tape
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1E-4
1E-3
0.01
0.1
1
Forward Current (A)
Forward Voltage (V)
-40
o
C
0
o
C
25
o
C
65
o
C
85
o
C
125
o
C
150
o
C
5 10 15 20 25 30
1E-4
1E-3
0.01
0.1
1
10
100
1000
Reverse Current (uA)
Reverse Voltage (V)
-40
o
C
0
o
C
25
o
C
65
o
C
85
o
C
125
o
C
150
o
C
0 5 10 15 20 25
5
10
15
20
Junction Capacitance-C
j
(pF)
Reverse Voltage (V)
T=25
o
C
f=1MHz