www.everspin.com The MRAM Company
Toggle MRAM
Magnetoresistive Random Access Memory
Fast Read/Write • Non-Volatile • Innite Endurance
Performance and Reliability
in Demanding Transportation
Applications
High Endurance, Non-volatility Ideal for
RAID Applications
High Performance, Unlimited En-
durance for Industrial and Human
Machine Interface Applications
Reliability - The Foremost Requirements
in Gaming Systems
www.everspin.com Everspin Technologies, Inc.
Everspin’s
State-of-the-Art
MRAM Technology
Everspin MRAM is Integrated with Standard CMOS Processing
Everspin MRAM is based on magnetic storage elements integrated
with CMOS processing. Each storage element uses a magnetic tun-
nel junction (MTJ) device for a memory cell.
The Magnetic Tunnel Junction Storage Element
The magnetic tunnel junction (MTJ) storage element is composed
of a xed magnetic layer, a thin dielectric tunnel barrier and a free
magnetic layer. When a bias is applied to the MTJ, electrons that are
spin polarized by the magnetic layers traverse the dielectric barrier
through a process known as tunneling.
How Everspin’s Patented MRAM Memory Technology Works
The MTJ device has a low resistance when the magnetic moment of the
free layer is parallel to the xed layer and a high resistance when the free
layer moment is oriented anti-parallel to the xed layer moment. This
change in resistance with the magnetic state of the device is an eect
known as magnetoresistance, hence the name “magnetoresistive” RAM.
Everspin MRAM Technology is Reliable
Unlike most other semiconductor memory technologies, the data is
stored as a magnetic state rather than a charge, and sensed by measuring
the resistance without disturbing the magnetic state. Using a magnetic
state for storage has two main benets. First, the magnetic polariza-
tion does not leak away over time like charge does, so the information
is stored even when the power is turned o. Second, switching the
magnetic polarization between the two states does not involve actual
movement of electrons or atoms, and thus no known wear-out mecha-
nism exists.
• Eliminate backup batteries and capacitors
• Non-volatile working memory
• Real-time data collection and backup
• AEC-Q100 qualied options
• Retain data on power fail
...and what you can do with it...